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Title: High voltage MOSFET switching circuit

Abstract

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

Inventors:
Issue Date:
OSTI Identifier:
7082462
Patent Number(s):
5332938
Application Number:
PPN: US 7-863914
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Patent File Date: 6 Apr 1992
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SWITCHING CIRCUITS; DESIGN; INDUCTANCE; MOSFET; PULSE SHAPERS; SEMICONDUCTOR SWITCHES; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; EQUIPMENT; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; PHYSICAL PROPERTIES; PULSE CIRCUITS; SEMICONDUCTOR DEVICES; SIGNAL CONDITIONERS; SWITCHES; TRANSISTORS; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

McEwan, T E. High voltage MOSFET switching circuit. United States: N. p., 1994. Web.
McEwan, T E. High voltage MOSFET switching circuit. United States.
McEwan, T E. Tue . "High voltage MOSFET switching circuit". United States.
@article{osti_7082462,
title = {High voltage MOSFET switching circuit},
author = {McEwan, T E},
abstractNote = {The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 26 00:00:00 EDT 1994},
month = {Tue Jul 26 00:00:00 EDT 1994}
}

Patent:
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