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Title: High voltage MOSFET switching circuit

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.
Inventors:
Issue Date:
OSTI Identifier:
7082462
Assignee:
Univ. of California, Oakland, CA (United States) PTO; EDB-94-132684
Patent Number(s):
US 5332938; A
Application Number:
PPN: US 7-863914
Contract Number:
W-7405-ENG-48
Resource Relation:
Patent File Date: 6 Apr 1992
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SWITCHING CIRCUITS; DESIGN; INDUCTANCE; MOSFET; PULSE SHAPERS; SEMICONDUCTOR SWITCHES; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; EQUIPMENT; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; PHYSICAL PROPERTIES; PULSE CIRCUITS; SEMICONDUCTOR DEVICES; SIGNAL CONDITIONERS; SWITCHES; TRANSISTORS; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)