Method utilizing laser-processing for the growth of epitaxial p-n junctions

Title: Method utilizing laser-processing for the growth of epitaxial p-n junctions

Full Record
Other Related Research

Abstract

This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

Inventors:: Young, R.T.; Narayan, J.; Wood, R.F.

Issue Date:: 1979-11-23

OSTI Identifier:: 7082044

Assignee:: Dept. of Energy TIC; ERA-06-004065; EDB-81-002007

DOE Contract Number:: W-7405-ENG-26

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; P-N JUNCTIONS; PRODUCTION; BORON; ELECTRICAL PROPERTIES; GROWTH; LASER RADIATION; PHOSPHORUS; PROCESSING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; ELECTROMAGNETIC RADIATION; ELEMENTS; JUNCTIONS; MATERIALS; NONMETALS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; 420800* - Engineering- Electronic Circuits & Devices- (-1989); 420300 - Engineering- Lasers- (-1989)

Citation Formats


                    Young, R.T., Narayan, J., and Wood, R.F. Method utilizing laser-processing for the growth of epitaxial p-n junctions.  United States: N. p., 1979. 
        Web.

Copy to clipboard


                    Young, R.T., Narayan, J., & Wood, R.F. Method utilizing laser-processing for the growth of epitaxial p-n junctions.  United States.

Copy to clipboard


                    Young, R.T., Narayan, J., and Wood, R.F. Fri .  
        "Method utilizing laser-processing for the growth of epitaxial p-n junctions".  United States.

Copy to clipboard


                    
@article{osti_7082044,

  title        = {Method utilizing laser-processing for the growth of epitaxial p-n junctions},

  author       = {Young, R.T. and Narayan, J. and Wood, R.F.},

  abstractNote = {This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1979},

  month        = {11}

}

Copy to clipboard

Patent:

Search for the full text at the U.S. Patent and Trademark Office

Save / Share:

Export Metadata

Save to My Library

Similar records in DOE Patents and OSTI.GOV collections:

Method for forming p-n junctions and solar-cells by laser-beam processing

Patent Narayan, J.; Young, R.T.

This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 ..mu..m, an energy area density of from about 1.0 to 2.0 J/cm/sup 2/, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the valuesmore »« less
Method for forming p-n junctions and solar-cells by laser-beam processing

Patent Narayan, Jagdish (Knoxville, TN); Young, Rosa T. (Knoxville, TN)

This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values formore »« less
Full Text Available
Modified laser-annealing process for improving the quality of electrical P-N junctions and devices

Patent Wood, R.F.; Young, R.T.

The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by: (1) providing a body of crystalline semiconductor material having a doped surface layer; (2) irradiating the layer with at least one laser pulse to effect melting of the layer; (3) permitting recrystallization of the melted layer; and (4) providing the resulting body with electrical contacts. In accordance with the invention, the fill-factor and open-circuit-voltage parameters of the device are increased by conducting the irradiation with the substrate as a whole at amore »« less
Full Text Available
Modified laser-annealing process for improving the quality of electrical P-N junctions and devices

Patent Wood, R.F.; Young, R.T.

The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by (1) providing a body of crystalline semiconductor material having a doped surface layer, (2) irradiating the layer with at least one laser pulse to effect melting of the layer, (3) permitting recrystallization of the melted layer, and (4) providing the resulting body with electrical contacts. In accordance with the invention, the fill-factor and open circuit-voltage parameters of the device are increased by conducting the irradiation with the substrate as a whole atmore »« less
Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

Patent Madan, A.

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

Similar Records