Method utilizing laser-processing for the growth of epitaxial p-n junctions
Abstract
This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7082044
- Assignee:
- Dept. of Energy
- DOE Contract Number:
- W-7405-ENG-26
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; P-N JUNCTIONS; PRODUCTION; BORON; ELECTRICAL PROPERTIES; GROWTH; LASER RADIATION; PHOSPHORUS; PROCESSING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; ELECTROMAGNETIC RADIATION; ELEMENTS; JUNCTIONS; MATERIALS; NONMETALS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; 420800* - Engineering- Electronic Circuits & Devices- (-1989); 420300 - Engineering- Lasers- (-1989)
Citation Formats
Young, R T, Narayan, J, and Wood, R F. Method utilizing laser-processing for the growth of epitaxial p-n junctions. United States: N. p., 1979.
Web.
Young, R T, Narayan, J, & Wood, R F. Method utilizing laser-processing for the growth of epitaxial p-n junctions. United States.
Young, R T, Narayan, J, and Wood, R F. Fri .
"Method utilizing laser-processing for the growth of epitaxial p-n junctions". United States.
@article{osti_7082044,
title = {Method utilizing laser-processing for the growth of epitaxial p-n junctions},
author = {Young, R T and Narayan, J and Wood, R F},
abstractNote = {This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {11}
}