Method utilizing laser-processing for the growth of epitaxial p-n junctions

Title: Method utilizing laser-processing for the growth of epitaxial p-n junctions

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Abstract

This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

Inventors:: Young, R T; Narayan, J; Wood, R F

Issue Date:: 1979-11-23

OSTI Identifier:: 7082044

Assignee:: Dept. of Energy

DOE Contract Number:: W-7405-ENG-26

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; P-N JUNCTIONS; PRODUCTION; BORON; ELECTRICAL PROPERTIES; GROWTH; LASER RADIATION; PHOSPHORUS; PROCESSING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; ELECTROMAGNETIC RADIATION; ELEMENTS; JUNCTIONS; MATERIALS; NONMETALS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; 420800* - Engineering- Electronic Circuits & Devices- (-1989); 420300 - Engineering- Lasers- (-1989)

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                    Young, R T, Narayan, J, and Wood, R F. Method utilizing laser-processing for the growth of epitaxial p-n junctions.  United States: N. p., 1979. 
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                    Young, R T, Narayan, J, & Wood, R F. Method utilizing laser-processing for the growth of epitaxial p-n junctions.  United States.

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                    Young, R T, Narayan, J, and Wood, R F. Fri .  
        "Method utilizing laser-processing for the growth of epitaxial p-n junctions".  United States.

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@article{osti_7082044,

  title        = {Method utilizing laser-processing for the growth of epitaxial p-n junctions},

  author       = {Young, R T and Narayan, J and Wood, R F},

  abstractNote = {This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1979},

  month        = {11}

}

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