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Title: Hard carbon nitride and method for preparing same

Abstract

Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.

Inventors:
; ;
Issue Date:
OSTI Identifier:
7072508
Patent Number(s):
5110679 A
Application Number:
PPN: US 7-513245
Assignee:
Univ. of California, Berkeley, CA (United States) PTO; EDB-94-082059
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Resource Relation:
Patent File Date: 24 Apr 1990
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON NITRIDES; PHYSICAL VAPOR DEPOSITION; CONTROLLED ATMOSPHERES; CRYSTAL STRUCTURE; SPUTTERING; ATMOSPHERES; CARBON COMPOUNDS; DEPOSITION; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SURFACE COATING; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Haller, E.E., Cohen, M.L., and Hansen, W.L. Hard carbon nitride and method for preparing same. United States: N. p., 1992. Web.
Haller, E.E., Cohen, M.L., & Hansen, W.L. Hard carbon nitride and method for preparing same. United States.
Haller, E.E., Cohen, M.L., and Hansen, W.L. Tue . "Hard carbon nitride and method for preparing same". United States.
@article{osti_7072508,
title = {Hard carbon nitride and method for preparing same},
author = {Haller, E.E. and Cohen, M.L. and Hansen, W.L.},
abstractNote = {Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {5}
}