Process for leveling film surfaces and products thereof
Abstract
Semiconductor films and photovoltaic devices prepared therefrom are provided wherein the semiconductor films have a specular surface with a texture less than about 0.25 micron greater than the average planar film surface and wherein the semiconductor films are surface modified by exposing the surface to an aqueous solution of bromine containing an acid or salt and continuing such exposure for a time sufficient to etch the surface. 8 figs.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 7071176
- Patent Number(s):
- 4909863
- Application Number:
- PPN: US 7-218758
- Assignee:
- Univ. of Delaware, Newark, DE (United States)
- DOE Contract Number:
- AC02-83CH10093; XL-7-06031-5
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 13 Jul 1988
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; SEMICONDUCTOR MATERIALS; ETCHING; FABRICATION; HYDROBROMIC ACID; SURFACE PROPERTIES; THIN FILMS; BROMINE COMPOUNDS; DIRECT ENERGY CONVERTERS; FILMS; HALOGEN COMPOUNDS; HYDROGEN COMPOUNDS; INORGANIC ACIDS; MATERIALS; PHOTOELECTRIC CELLS; SURFACE FINISHING; 360601* - Other Materials- Preparation & Manufacture; 140501 - Solar Energy Conversion- Photovoltaic Conversion
Citation Formats
Birkmire, R W, and McCandless, B E. Process for leveling film surfaces and products thereof. United States: N. p., 1990.
Web.
Birkmire, R W, & McCandless, B E. Process for leveling film surfaces and products thereof. United States.
Birkmire, R W, and McCandless, B E. Tue .
"Process for leveling film surfaces and products thereof". United States.
@article{osti_7071176,
title = {Process for leveling film surfaces and products thereof},
author = {Birkmire, R W and McCandless, B E},
abstractNote = {Semiconductor films and photovoltaic devices prepared therefrom are provided wherein the semiconductor films have a specular surface with a texture less than about 0.25 micron greater than the average planar film surface and wherein the semiconductor films are surface modified by exposing the surface to an aqueous solution of bromine containing an acid or salt and continuing such exposure for a time sufficient to etch the surface. 8 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {3}
}
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