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Title: Interrupted polysilanes useful as photoresists

Abstract

Polysilane polymers in which the Si backbone is interrupted by atoms such as O, Ge, Sn, P, etc., are useful photoresists especially in the solvent development mode.

Inventors:
Issue Date:
OSTI Identifier:
7071000
Patent Number(s):
4761464 A
Application Number:
PPN: US 6-910672
Assignee:
SNL; EDB-94-117021
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Patent File Date: 23 Sep 1986
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ORGANIC POLYMERS; MICROSTRUCTURE; OPTICAL PROPERTIES; PHOTOCHEMICAL REACTIONS; MASKING; SILANES; GERMANIUM; OXYGEN; PHOSPHORUS; TIN; CHEMICAL REACTIONS; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; METALS; NONMETALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; PHYSICAL PROPERTIES; POLYMERS; SILICON COMPOUNDS; 360602* - Other Materials- Structure & Phase Studies; 360606 - Other Materials- Physical Properties- (1992-); 400500 - Photochemistry

Citation Formats

Zeigler, J.M. Interrupted polysilanes useful as photoresists. United States: N. p., 1988. Web.
Zeigler, J.M. Interrupted polysilanes useful as photoresists. United States.
Zeigler, J.M. Tue . "Interrupted polysilanes useful as photoresists". United States.
@article{osti_7071000,
title = {Interrupted polysilanes useful as photoresists},
author = {Zeigler, J.M.},
abstractNote = {Polysilane polymers in which the Si backbone is interrupted by atoms such as O, Ge, Sn, P, etc., are useful photoresists especially in the solvent development mode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {8}
}