Amorphous silicon ionizing particle detectors

Street, R A; Mendez, V P; Kaplan, S N

Title: Amorphous silicon ionizing particle detectors

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Abstract

Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

Inventors:: Street, R A; Mendez, V P; Kaplan, S N

Issue Date:: 1988-11-15

OSTI Identifier:: 7067899

Patent Number(s):: 4785186

Application Number:: PPN: US 6-921302

Assignee:: Xerox Corp., Stamford, CT (United States)

DOE Contract Number:: AC03-76SF00098

Resource Type:: Patent

Resource Relation:: Patent File Date: 21 Oct 1986

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ALPHA DETECTION; SI SEMICONDUCTOR DETECTORS; BETA DETECTION; ELECTRON DETECTION; GAMMA DETECTION; X-RAY DETECTION; AMORPHOUS STATE; IONIZING RADIATIONS; POSITION SENSITIVE DETECTORS; CHARGED PARTICLE DETECTION; DETECTION; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; RADIATIONS; SEMICONDUCTOR DETECTORS; 440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments

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                    Street, R A, Mendez, V P, and Kaplan, S N. Amorphous silicon ionizing particle detectors.  United States: N. p., 1988. 
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                    Street, R A, Mendez, V P, & Kaplan, S N. Amorphous silicon ionizing particle detectors.  United States.

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                    Street, R A, Mendez, V P, and Kaplan, S N. Tue .  
        "Amorphous silicon ionizing particle detectors".  United States.

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@article{osti_7067899,

  title        = {Amorphous silicon ionizing particle detectors},

  author       = {Street, R A and Mendez, V P and Kaplan, S N},

  abstractNote = {Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1988},

  month        = {11}

}

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