Amorphous silicon ionizing particle detectors

Title: Amorphous silicon ionizing particle detectors

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Abstract

Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

Inventors:: Street, R.A.; Mendez, V.P.; Kaplan, S.N.

Issue Date:: 1988-11-15

OSTI Identifier:: 7067899

Patent Number(s):: 4785186 A

Application Number:: PPN: US 6-921302

Assignee:: Xerox Corp., Stamford, CT (United States) PTO; EDB-94-118204

DOE Contract Number:: AC03-76SF00098

Resource Type:: Patent

Resource Relation:: Patent File Date: 21 Oct 1986

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ALPHA DETECTION; SI SEMICONDUCTOR DETECTORS; BETA DETECTION; ELECTRON DETECTION; GAMMA DETECTION; X-RAY DETECTION; AMORPHOUS STATE; IONIZING RADIATIONS; POSITION SENSITIVE DETECTORS; CHARGED PARTICLE DETECTION; DETECTION; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; RADIATIONS; SEMICONDUCTOR DETECTORS; 440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments

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                    Street, R.A., Mendez, V.P., and Kaplan, S.N. Amorphous silicon ionizing particle detectors.  United States: N. p., 1988. 
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                    Street, R.A., Mendez, V.P., & Kaplan, S.N. Amorphous silicon ionizing particle detectors.  United States.

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                    Street, R.A., Mendez, V.P., and Kaplan, S.N. Tue .  
        "Amorphous silicon ionizing particle detectors".  United States.

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@article{osti_7067899,

  title        = {Amorphous silicon ionizing particle detectors},

  author       = {Street, R.A. and Mendez, V.P. and Kaplan, S.N.},

  abstractNote = {Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1988},

  month        = {11}

}

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Amorphous silicon ionizing particle detectors

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This patent describes a particle detector having a body portion for detecting high energy ionizing particles moving in a path toward the detector where, upon penetration into the detector body portion, form electron-hole pairs. It comprises: a substrate, first electrode means formed on the substrate, an a-Si:H film deposited on the first electrode, the a-Si:H film comprises three monolithic, contiguous regions consecutively comprising an a-Si region doped to be a first conductivity type, an intrinsic region of a-Si and an a-Si region doped to be a second conductivity type, second electrode means formed over the a-Si:H film, means to increasemore »« less
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Electrical transport properties of the PECVD a-Si:H material has been improved by using hydrogen and/or helium dilution of silane and lower substrate temperature for deposition. For hydrogen-diluted material the authors measured electron and hole mobilities {approximately}4 times larger, and {micro}{tau} values 2--3 times higher than for the standard a-Si:H. The density of ionized dangling bonds (N{sub D}*) also showed a factor of 5--10 improvement. Due to its higher conductivity, the improved a-Si:H material is more suitable than conventional a-Si:H for TFT applications. However, it is difficult to make thick layers by H-dilution because of high internal stress. On the othermore »« less
DOI: 10.1109/23.467843

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