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Title: Method for forming low-resistance ohmic contacts on semiconducting oxides

Abstract

The invention provides a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO/sub 3/ containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO/sub 3/ surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temmperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.

Inventors:
Issue Date:
OSTI Identifier:
7062189
Assignee:
Dept. of Energy TIC; ERA-06-005173; EDB-81-005648
DOE Contract Number:  
W-7405-ENG-26
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC CONTACTS; FABRICATION; SEMICONDUCTOR MATERIALS; ELECTRIC CONDUCTIVITY; SUPERCONDUCTING DEVICES; BARIUM COMPOUNDS; COST; FILMS; IRRADIATION; LASERS; OXIDES; P-N JUNCTIONS; Q-SWITCHING; SAFETY; SURFACE COATING; TITANIUM OXIDES; ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; DEPOSITION; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; JUNCTIONS; MATERIALS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; 420201* - Engineering- Cryogenic Equipment & Devices

Citation Formats

Narayan, J. Method for forming low-resistance ohmic contacts on semiconducting oxides. United States: N. p., 1979. Web.
Narayan, J. Method for forming low-resistance ohmic contacts on semiconducting oxides. United States.
Narayan, J. Mon . "Method for forming low-resistance ohmic contacts on semiconducting oxides". United States.
@article{osti_7062189,
title = {Method for forming low-resistance ohmic contacts on semiconducting oxides},
author = {Narayan, J.},
abstractNote = {The invention provides a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO/sub 3/ containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO/sub 3/ surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temmperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {10}
}