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Title: Method of fabricating optical waveguides by ion implantation doping

Abstract

A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO/sub 3/ crystals are implanted with high concentrations of Ti dopant at ion energies of about 360 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000/degree/C produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguiding properties.

Inventors:
; ;
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
7043823
Patent Number(s):
6029570
Assignee:
TIC; EDB-88-178864
Patent Classifications (CPCs):
D - TEXTILES D21 - PAPER-MAKING D21F - PAPER-MAKING MACHINES
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Patent
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; WAVEGUIDES; FABRICATION; CRYSTAL DOPING; CRYSTAL STRUCTURE; INVENTIONS; ION IMPLANTATION; 420200* - Engineering- Facilities, Equipment, & Techniques

Citation Formats

Appleton, B R, Ashley, P R, and Buchal, C J. Method of fabricating optical waveguides by ion implantation doping. United States: N. p., 1987. Web.
Appleton, B R, Ashley, P R, & Buchal, C J. Method of fabricating optical waveguides by ion implantation doping. United States.
Appleton, B R, Ashley, P R, and Buchal, C J. Tue . "Method of fabricating optical waveguides by ion implantation doping". United States.
@article{osti_7043823,
title = {Method of fabricating optical waveguides by ion implantation doping},
author = {Appleton, B R and Ashley, P R and Buchal, C J},
abstractNote = {A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO/sub 3/ crystals are implanted with high concentrations of Ti dopant at ion energies of about 360 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000/degree/C produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguiding properties.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {3}
}