Semiconductor devices incorporating multilayer interference regions

Title: Semiconductor devices incorporating multilayer interference regions

Full Record
Other Related Research

Abstract

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

Inventors:: Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

Issue Date:: 1987-08-31

Research Org.:: Sandia National Labs., Albuquerque, NM (USA)

OSTI Identifier:: 7043392

Patent Number(s):: -US-A6091560

Assignee:: SNL; EDB-88-178976

DOE Contract Number:: AC04-76DP00789

Resource Type:: Patent

Resource Relation:: Other Information: Portions of this document are illegible in microfiche products

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; SEMICONDUCTOR LASERS; DESIGN; FABRY-PEROT INTERFEROMETER; INVENTIONS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TUNING; INTERFEROMETERS; JUNCTIONS; LASERS; MATERIALS; MEASURING INSTRUMENTS; SEMICONDUCTOR DEVICES; 420300* - Engineering- Lasers- (-1989)

Citation Formats


                    Biefeld, R.M., Drummond, T.J., Gourley, P.L., and Zipperian, T.E. Semiconductor devices incorporating multilayer interference regions.  United States: N. p., 1987. 
        Web.

Copy to clipboard


                    Biefeld, R.M., Drummond, T.J., Gourley, P.L., & Zipperian, T.E. Semiconductor devices incorporating multilayer interference regions.  United States.

Copy to clipboard


                    Biefeld, R.M., Drummond, T.J., Gourley, P.L., and Zipperian, T.E. Mon .  
        "Semiconductor devices incorporating multilayer interference regions".  United States.

Copy to clipboard


                    
@article{osti_7043392,

  title        = {Semiconductor devices incorporating multilayer interference regions},

  author       = {Biefeld, R.M. and Drummond, T.J. and Gourley, P.L. and Zipperian, T.E.},

  abstractNote = {A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1987},

  month        = {8}

}

Copy to clipboard

Patent:

Search for the full text at the U.S. Patent and Trademark Office

Save / Share:

Export Metadata

Save to My Library

Similar records in DOE Patents and OSTI.GOV collections:

Semiconductor devices incorporating multilayer interference regions

Patent Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; ...

This patent describes a semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.
Semiconductor devices incorporating multilayer interference regions

Patent Biefeld, Robert M. (Albuquerque, NM); Drummond, Timothy J. (Tijeras, NM); Gourley, Paul L. (Albuquerque, NM); ...

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.
Full Text Available
Electrodeposited doped II-VI semiconductor films and devices incorporating such films

Patent Ondris, M.; Picher, M.A.; Brownfield, R.E.

This patent describes a photovoltaic device. It comprises: a first thin film of a compound semiconductor of a first conductivity type including tellurium and a metal selected from Group IIB of the Periodic Table of Elements and containing as a dopant impurity in a concentration not exceeding 10{sup 20} atoms per cubic centimeter a metal selected from Group IB, a second semiconductor thin film in contact with the first semiconductor thin film and having a second conductivity type opposite that of the first conductivity type and electrical contacts to each of the first and second semiconductor thin films. Also describedmore »« less
Tandem junction solar cell devices incorporating improved microcrystalline P-doped semiconductor alloy material

Patent Guha, S.; Kulman, J.

A tandem photovoltaic structure is described which consists of: a. n stacked solar cells, where n is an integer greater than 1; b. each cell including layers of amorphous semiconductor alloy material in optical and electrical series relationship; the layers of each cell including therein oppositely doped layers establishing therebetween an electric field region for the collection of electron-hole pairs generated therein, wherein light impinging on the structure passes sequentially through the doped layers and the electric field regions with a portion of the light being absorbed in each of the electric field regions; and the plurality of layers includingmore »« less
Phase-to-pulse conversion circuits incorporating Josephson devices and superconducting interconnection circuitry

Patent Zappe, H.H.

Josephson tunneling devices are used as parametrons in circuits for logic and memory. Parametron circuits are used as input devices to conventional pulsed Josephson tunneling device circuitry, and as output devices from pulsed Josephson tunneling device circuitry. Therefore, transfers from phase information to pulse information and from pulse information to phase information are obtained. Interconnection between superconducting circuit chips is achieved using Josephson tunneling parametrons and Josephson tunneling detectors. Another interconnection scheme uses capacitive coupling between superconducting circuit chips without physical interconnections therebetween, and employs Josephson tunneling devices on separate chips for the receiving and sending circuitry.

Similar Records