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Title: Semiconductor devices incorporating multilayer interference regions

Abstract

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
OSTI Identifier:
7043392
Patent Number(s):
6091560
Assignee:
SNL; EDB-88-178976
Patent Classifications (CPCs):
G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; DESIGN; FABRY-PEROT INTERFEROMETER; INVENTIONS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TUNING; INTERFEROMETERS; JUNCTIONS; LASERS; MATERIALS; MEASURING INSTRUMENTS; SEMICONDUCTOR DEVICES; 420300* - Engineering- Lasers- (-1989)

Citation Formats

Biefeld, R M, Drummond, T J, Gourley, P L, and Zipperian, T E. Semiconductor devices incorporating multilayer interference regions. United States: N. p., 1987. Web.
Biefeld, R M, Drummond, T J, Gourley, P L, & Zipperian, T E. Semiconductor devices incorporating multilayer interference regions. United States.
Biefeld, R M, Drummond, T J, Gourley, P L, and Zipperian, T E. Mon . "Semiconductor devices incorporating multilayer interference regions". United States.
@article{osti_7043392,
title = {Semiconductor devices incorporating multilayer interference regions},
author = {Biefeld, R M and Drummond, T J and Gourley, P L and Zipperian, T E},
abstractNote = {A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {8}
}