Semiconductor devices incorporating multilayer interference regions
Abstract
A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- OSTI Identifier:
- 7043392
- Patent Number(s):
- 6091560
- Assignee:
- SNL; EDB-88-178976
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Resource Relation:
- Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; SEMICONDUCTOR LASERS; DESIGN; FABRY-PEROT INTERFEROMETER; INVENTIONS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TUNING; INTERFEROMETERS; JUNCTIONS; LASERS; MATERIALS; MEASURING INSTRUMENTS; SEMICONDUCTOR DEVICES; 420300* - Engineering- Lasers- (-1989)
Citation Formats
Biefeld, R M, Drummond, T J, Gourley, P L, and Zipperian, T E. Semiconductor devices incorporating multilayer interference regions. United States: N. p., 1987.
Web.
Biefeld, R M, Drummond, T J, Gourley, P L, & Zipperian, T E. Semiconductor devices incorporating multilayer interference regions. United States.
Biefeld, R M, Drummond, T J, Gourley, P L, and Zipperian, T E. Mon .
"Semiconductor devices incorporating multilayer interference regions". United States.
@article{osti_7043392,
title = {Semiconductor devices incorporating multilayer interference regions},
author = {Biefeld, R M and Drummond, T J and Gourley, P L and Zipperian, T E},
abstractNote = {A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {8}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.