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Title: Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate

Abstract

A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment. 6 figures.

Inventors:
; ; ;
Issue Date:
OSTI Identifier:
7037213
Patent Number(s):
5308661 A
Application Number:
CNN: MSS-8996309; PPN: US 8-025433
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Resource Relation:
Patent File Date: 3 Mar 1993
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIAMONDS; DEPOSITION; SUBSTRATES; SURFACE TREATMENTS; NUCLEATION; CARBON; ELEMENTAL MINERALS; ELEMENTS; MINERALS; NONMETALS; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Feng, Z, Brewer, M, Brown, I, and Komvopoulos, K. Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate. United States: N. p., 1994. Web.
Feng, Z, Brewer, M, Brown, I, & Komvopoulos, K. Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate. United States.
Feng, Z, Brewer, M, Brown, I, and Komvopoulos, K. Tue . "Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate". United States.
@article{osti_7037213,
title = {Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate},
author = {Feng, Z and Brewer, M and Brown, I and Komvopoulos, K},
abstractNote = {A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment. 6 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {5}
}