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Title: Method for silicon carbide production by reacting silica with hydrocarbon gas

Abstract

A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400 C to 1000 C where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100 C to 1600 C to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process. 5 figures.

Inventors:
Issue Date:
OSTI Identifier:
7029061
Patent Number(s):
5324494 A
Application Number:
PPN: US 8-007268
Assignee:
Midwest Research Institute, Kansas City, MO (United States) PTO; EDB-94-109812
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Resource Relation:
Patent File Date: 21 Jan 1993
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON; CHEMICAL COATING; SILICON; COATINGS; SILICON CARBIDES; SYNTHESIS; HEAT TREATMENTS; PYROLYSIS; CARBIDES; CARBON COMPOUNDS; CHEMICAL REACTIONS; DECOMPOSITION; DEPOSITION; ELEMENTS; NONMETALS; SEMIMETALS; SILICON COMPOUNDS; SURFACE COATING; THERMOCHEMICAL PROCESSES; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Glatzmaier, G.C. Method for silicon carbide production by reacting silica with hydrocarbon gas. United States: N. p., 1994. Web.
Glatzmaier, G.C. Method for silicon carbide production by reacting silica with hydrocarbon gas. United States.
Glatzmaier, G.C. Tue . "Method for silicon carbide production by reacting silica with hydrocarbon gas". United States.
@article{osti_7029061,
title = {Method for silicon carbide production by reacting silica with hydrocarbon gas},
author = {Glatzmaier, G.C.},
abstractNote = {A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400 C to 1000 C where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100 C to 1600 C to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process. 5 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {6}
}