Method of bonding single crystal quartz by field-assisted bonding
Abstract
The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals. 2 figures.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7028470
- Patent Number(s):
- 5009690 A
- Application Number:
- PPN: US 7-490895
- Assignee:
- Dept. of Energy, Washington, DC (United States) SNL; EDB-94-110286
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 9 Mar 1990
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; QUARTZ; BONDING; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; HEATING; POSITIONING; ELECTRICAL PROPERTIES; FABRICATION; JOINING; MINERALS; OXIDE MINERALS; PHYSICAL PROPERTIES; 360601* - Other Materials- Preparation & Manufacture
Citation Formats
Curlee, R.M., Tuthill, C.D., and Watkins, R.D. Method of bonding single crystal quartz by field-assisted bonding. United States: N. p., 1991.
Web.
Curlee, R.M., Tuthill, C.D., & Watkins, R.D. Method of bonding single crystal quartz by field-assisted bonding. United States.
Curlee, R.M., Tuthill, C.D., and Watkins, R.D. Tue .
"Method of bonding single crystal quartz by field-assisted bonding". United States.
@article{osti_7028470,
title = {Method of bonding single crystal quartz by field-assisted bonding},
author = {Curlee, R.M. and Tuthill, C.D. and Watkins, R.D.},
abstractNote = {The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals. 2 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {4}
}