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Title: Method of passivating semiconductor surfaces

Abstract

A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Inventors:
Issue Date:
OSTI Identifier:
7020250
Patent Number(s):
4935384 A
Application Number:
PPN: US 7-284222
Assignee:
Dept. of Energy, Washington, DC (United States) PTO; EDB-94-117066
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Resource Relation:
Patent File Date: 14 Dec 1988
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SEMICONDUCTOR DEVICES; DESIGN; SEMICONDUCTOR MATERIALS; PASSIVATION; FABRICATION; LATTICE PARAMETERS; PROTECTIVE COATINGS; SOLAR CELLS; THIN FILMS; COATINGS; DIRECT ENERGY CONVERTERS; EQUIPMENT; FILMS; MATERIALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR EQUIPMENT; 360604* - Materials- Corrosion, Erosion, & Degradation; 360601 - Other Materials- Preparation & Manufacture; 140501 - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Wanlass, M.W. Method of passivating semiconductor surfaces. United States: N. p., 1990. Web.
Wanlass, M.W. Method of passivating semiconductor surfaces. United States.
Wanlass, M.W. Tue . "Method of passivating semiconductor surfaces". United States.
@article{osti_7020250,
title = {Method of passivating semiconductor surfaces},
author = {Wanlass, M.W.},
abstractNote = {A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {6}
}