Method of passivating semiconductor surfaces

Wanlass, M W

Title: Method of passivating semiconductor surfaces

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Abstract

A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Inventors:: Wanlass, M W

Issue Date:: 1990-06-19

OSTI Identifier:: 7020250

Patent Number(s):: 4935384

Application Number:: PPN: US 7-284222

Assignee:: Dept. of Energy, Washington, DC (United States)

DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Resource Relation:: Patent File Date: 14 Dec 1988

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SEMICONDUCTOR DEVICES; DESIGN; SEMICONDUCTOR MATERIALS; PASSIVATION; FABRICATION; LATTICE PARAMETERS; PROTECTIVE COATINGS; SOLAR CELLS; THIN FILMS; COATINGS; DIRECT ENERGY CONVERTERS; EQUIPMENT; FILMS; MATERIALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR EQUIPMENT; 360604* - Materials- Corrosion, Erosion, & Degradation; 360601 - Other Materials- Preparation & Manufacture; 140501 - Solar Energy Conversion- Photovoltaic Conversion

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                    Wanlass, M W. Method of passivating semiconductor surfaces.  United States: N. p., 1990. 
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                    Wanlass, M W. Method of passivating semiconductor surfaces.  United States.

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                    Wanlass, M W. Tue .  
        "Method of passivating semiconductor surfaces".  United States.

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@article{osti_7020250,

  title        = {Method of passivating semiconductor surfaces},

  author       = {Wanlass, M W},

  abstractNote = {A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1990},

  month        = {6}

}

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