VUV lithography
Abstract
Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7018790
- Patent Number(s):
- 4980563
- Application Number:
- PPN: US 7-462251
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 9 Jan 1990
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; MICROELECTRONIC CIRCUITS; FABRICATION; MASKING; ELECTRON BEAMS; ULTRAVIOLET RADIATION; BEAMS; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; LEPTON BEAMS; PARTICLE BEAMS; RADIATIONS; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)
Citation Formats
George, E V, Oster, Y, and Mundinger, D C. VUV lithography. United States: N. p., 1990.
Web.
George, E V, Oster, Y, & Mundinger, D C. VUV lithography. United States.
George, E V, Oster, Y, and Mundinger, D C. Tue .
"VUV lithography". United States.
@article{osti_7018790,
title = {VUV lithography},
author = {George, E V and Oster, Y and Mundinger, D C},
abstractNote = {Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {12}
}
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