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Title: VUV lithography

Abstract

Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.

Inventors:
; ;
Issue Date:
OSTI Identifier:
7018790
Patent Number(s):
4980563 A
Application Number:
PPN: US 7-462251
Assignee:
Dept. of Energy, Washington, DC (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Patent File Date: 9 Jan 1990
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; MICROELECTRONIC CIRCUITS; FABRICATION; MASKING; ELECTRON BEAMS; ULTRAVIOLET RADIATION; BEAMS; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; LEPTON BEAMS; PARTICLE BEAMS; RADIATIONS; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

George, E V, Oster, Y, and Mundinger, D C. VUV lithography. United States: N. p., 1990. Web.
George, E V, Oster, Y, & Mundinger, D C. VUV lithography. United States.
George, E V, Oster, Y, and Mundinger, D C. Tue . "VUV lithography". United States.
@article{osti_7018790,
title = {VUV lithography},
author = {George, E V and Oster, Y and Mundinger, D C},
abstractNote = {Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {12}
}