skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Superconducting structure with layers of niobium nitride and aluminum nitride

Abstract

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

Inventors:
; ; ;
Issue Date:
OSTI Identifier:
7014343
Patent Number(s):
4844989 A
Application Number:
PPN: US 7-027928
Assignee:
Univ. of Chicago, IL (United States) PTO; EDB-94-120676
DOE Contract Number:  
AC02-84GC20057
Resource Type:
Patent
Resource Relation:
Patent File Date: 19 Mar 1987
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; JOSEPHSON JUNCTIONS; FABRICATION; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; ENERGY BEAM DEPOSITION; MICROWAVE EQUIPMENT; NIOBIUM NITRIDES; SPUTTERING; SUPERCONDUCTORS; ALUMINIUM COMPOUNDS; CHEMICAL COATING; DEPOSITION; ELECTRONIC EQUIPMENT; EQUIPMENT; JUNCTIONS; NIOBIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SUPERCONDUCTING JUNCTIONS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; 665412* - Superconducting Devices- (1992-)

Citation Formats

Murduck, J.M., Lepetre, Y.J., Schuller, I.K., and Ketterson, J.B. Superconducting structure with layers of niobium nitride and aluminum nitride. United States: N. p., 1989. Web.
Murduck, J.M., Lepetre, Y.J., Schuller, I.K., & Ketterson, J.B. Superconducting structure with layers of niobium nitride and aluminum nitride. United States.
Murduck, J.M., Lepetre, Y.J., Schuller, I.K., and Ketterson, J.B. Tue . "Superconducting structure with layers of niobium nitride and aluminum nitride". United States.
@article{osti_7014343,
title = {Superconducting structure with layers of niobium nitride and aluminum nitride},
author = {Murduck, J.M. and Lepetre, Y.J. and Schuller, I.K. and Ketterson, J.B.},
abstractNote = {A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {7}
}