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Title: Method of bistable optical information storage using antiferroelectric phase PLZT ceramics

Abstract

A method for bistable storage of binary optical information includes an antiferroelectric (AFE) lead lanthanum zirconate titanate (PLZT) layer having a stable antiferroelectric first phase and a ferroelectric (FE) second phase obtained by applying a switching electric field across the surface of the device. Optical information is stored by illuminating selected portions of the layer to photoactivate an FE to AFE transition in those portions. Erasure of the stored information is obtained by reapplying the switching field. 8 figs.

Inventors:
Issue Date:
OSTI Identifier:
7013761
Patent Number(s):
4945514 A
Application Number:
PPN: US 7-200104
Assignee:
SNL; EDB-94-121041
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Patent File Date: 31 May 1988
Country of Publication:
United States
Language:
English
Subject:
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE; MEMORY DEVICES; DESIGN; OPTICAL COMPUTERS; OPTICAL EQUIPMENT; PLZT; COMPUTERS; EQUIPMENT; LANTHANUM COMPOUNDS; LEAD COMPOUNDS; OXYGEN COMPOUNDS; RARE EARTH COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONATES; ZIRCONIUM COMPOUNDS; 990200* - Mathematics & Computers

Citation Formats

Land, C.E. Method of bistable optical information storage using antiferroelectric phase PLZT ceramics. United States: N. p., 1990. Web.
Land, C.E. Method of bistable optical information storage using antiferroelectric phase PLZT ceramics. United States.
Land, C.E. Tue . "Method of bistable optical information storage using antiferroelectric phase PLZT ceramics". United States.
@article{osti_7013761,
title = {Method of bistable optical information storage using antiferroelectric phase PLZT ceramics},
author = {Land, C.E.},
abstractNote = {A method for bistable storage of binary optical information includes an antiferroelectric (AFE) lead lanthanum zirconate titanate (PLZT) layer having a stable antiferroelectric first phase and a ferroelectric (FE) second phase obtained by applying a switching electric field across the surface of the device. Optical information is stored by illuminating selected portions of the layer to photoactivate an FE to AFE transition in those portions. Erasure of the stored information is obtained by reapplying the switching field. 8 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {7}
}