Method for measuring the drift mobility in doped semiconductors

Crandall, R S

Title: Method for measuring the drift mobility in doped semiconductors

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Abstract

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.

Inventors:: Crandall, R S

Issue Date:: 1982-03-09

Research Org.:: RCA Corp

OSTI Identifier:: 7012006

Patent Number(s):: 4319187

Application Number:: PPN: US 6-133253

Assignee:: RCA Corp., New York, NY (United States)

DOE Contract Number:: AC03-78ET21074

Resource Type:: Patent

Resource Relation:: Patent File Date: 24 Mar 1980

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; CARRIER MOBILITY; SOLAR CELLS; CHARGE CARRIERS; DOPED MATERIALS; HYDROGENATION; MEASURING METHODS; SEMICONDUCTOR MATERIALS; CHEMICAL REACTIONS; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; MATERIALS; MOBILITY; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360606 - Other Materials- Physical Properties- (1992-)

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                    Crandall, R S. Method for measuring the drift mobility in doped semiconductors.  United States: N. p., 1982. 
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                    Crandall, R S. Method for measuring the drift mobility in doped semiconductors.  United States.

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                    Crandall, R S. Tue .  
        "Method for measuring the drift mobility in doped semiconductors".  United States.

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@article{osti_7012006,

  title        = {Method for measuring the drift mobility in doped semiconductors},

  author       = {Crandall, R S},

  abstractNote = {A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1982},

  month        = {3}

}

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