Method for measuring the drift mobility in doped semiconductors
Abstract
A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.
- Inventors:
- Issue Date:
- Research Org.:
- RCA Corp
- OSTI Identifier:
- 7012006
- Patent Number(s):
- 4319187
- Application Number:
- PPN: US 6-133253
- Assignee:
- RCA Corp., New York, NY (United States)
- DOE Contract Number:
- AC03-78ET21074
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 24 Mar 1980
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; CARRIER MOBILITY; SOLAR CELLS; CHARGE CARRIERS; DOPED MATERIALS; HYDROGENATION; MEASURING METHODS; SEMICONDUCTOR MATERIALS; CHEMICAL REACTIONS; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; MATERIALS; MOBILITY; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360606 - Other Materials- Physical Properties- (1992-)
Citation Formats
Crandall, R S. Method for measuring the drift mobility in doped semiconductors. United States: N. p., 1982.
Web.
Crandall, R S. Method for measuring the drift mobility in doped semiconductors. United States.
Crandall, R S. Tue .
"Method for measuring the drift mobility in doped semiconductors". United States.
@article{osti_7012006,
title = {Method for measuring the drift mobility in doped semiconductors},
author = {Crandall, R S},
abstractNote = {A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 09 00:00:00 EST 1982},
month = {Tue Mar 09 00:00:00 EST 1982}
}
Search for the full text at the U.S. Patent and Trademark Office
Note: You will be redirected to the USPTO site, which may require a pop-up blocker to be deactivated to view the patent. If so, you will need to manually turn off your browser's pop-up blocker, typically found within the browser settings. (See DOE Patents FAQs for more information.)
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.