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Title: High temperature bias line stabilized current sources

Abstract

A compensation device for the base of emitter follower configured bipolar transistors becoming operable at elevated temperatures including a bipolar transistor of a geometry of not more than half the geometry of the bipolar emitter follower having its collector connected to the base of the emitter follower and its base and emitter connected together and to the emitter of the emitter follower. 1 fig.

Inventors:
Issue Date:
OSTI Identifier:
7002374
Patent Number(s):
4471236 A
Application Number:
PPN: US 6-351442
Assignee:
Harris Corp., Melbourne, FL (United States) SNL; EDB-94-125321
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Patent File Date: 23 Feb 1982
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; TRANSISTORS; STABILIZATION; RESPONSE FUNCTIONS; SPACE DEPENDENCE; TEMPERATURE DEPENDENCE; FUNCTIONS; SEMICONDUCTOR DEVICES; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Patterson, R.B. III. High temperature bias line stabilized current sources. United States: N. p., 1984. Web.
Patterson, R.B. III. High temperature bias line stabilized current sources. United States.
Patterson, R.B. III. Tue . "High temperature bias line stabilized current sources". United States.
@article{osti_7002374,
title = {High temperature bias line stabilized current sources},
author = {Patterson, R.B. III.},
abstractNote = {A compensation device for the base of emitter follower configured bipolar transistors becoming operable at elevated temperatures including a bipolar transistor of a geometry of not more than half the geometry of the bipolar emitter follower having its collector connected to the base of the emitter follower and its base and emitter connected together and to the emitter of the emitter follower. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {9}
}