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Title: Evaporation system and method for gas jet deposition of thin film materials

Abstract

A method and apparatus are disclosed for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases. 8 figs.

Inventors:
;
Issue Date:
OSTI Identifier:
7000373
Patent Number(s):
5356673
Application Number:
PPN: US 7-670693
Assignee:
Jet Process Corp., New Haven, CT (United States)
DOE Contract Number:  
FG02-88ER13818
Resource Type:
Patent
Resource Relation:
Patent File Date: 18 Mar 1991
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; METALS; CHEMICAL VAPOR DEPOSITION; NITRIDES; OXIDES; THIN FILMS; EQUIPMENT; SUPERSONIC FLOW; VACUUM EVAPORATION; VAPOR DEPOSITED COATINGS; CHALCOGENIDES; CHEMICAL COATING; COATINGS; DEPOSITION; ELEMENTS; EVAPORATION; FILMS; FLUID FLOW; NITROGEN COMPOUNDS; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PNICTIDES; SURFACE COATING; 360101* - Metals & Alloys- Preparation & Fabrication; 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Schmitt, J J, and Halpern, B L. Evaporation system and method for gas jet deposition of thin film materials. United States: N. p., 1994. Web.
Schmitt, J J, & Halpern, B L. Evaporation system and method for gas jet deposition of thin film materials. United States.
Schmitt, J J, and Halpern, B L. Tue . "Evaporation system and method for gas jet deposition of thin film materials". United States.
@article{osti_7000373,
title = {Evaporation system and method for gas jet deposition of thin film materials},
author = {Schmitt, J J and Halpern, B L},
abstractNote = {A method and apparatus are disclosed for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases. 8 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {10}
}

Patent:
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