Solar-induced chemical vapor deposition of diamond-type carbon films

Pitts, J R; Tracy, C E; King, D E; Stanley, J T

Title: Solar-induced chemical vapor deposition of diamond-type carbon films

Full Record
Other Related Research

Abstract

An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

Inventors:: Pitts, J R; Tracy, C E; King, D E; Stanley, J T

Issue Date:: 1994-09-13

OSTI Identifier:: 6954543

Patent Number(s):: 5346729

Application Number:: PPN: US 8-062840

Assignee:: Midwest Research Inst., Kansas City, MO (United States)

DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Resource Relation:: Patent File Date: 17 May 1993

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CHEMICAL REACTORS; SOLAR HEATING; DIAMONDS; CHEMICAL VAPOR DEPOSITION; SOLAR PROCESS HEAT; THIN FILMS; CARBON; CHEMICAL COATING; DEPOSITION; ELEMENTAL MINERALS; ELEMENTS; ENERGY; FILMS; HEAT; HEATING; MINERALS; NONMETALS; PROCESS HEAT; SURFACE COATING; 140905*; 360601 - Other Materials- Preparation & Manufacture

Citation Formats


                    Pitts, J R, Tracy, C E, King, D E, and Stanley, J T. Solar-induced chemical vapor deposition of diamond-type carbon films.  United States: N. p., 1994. 
        Web.

Copy to clipboard


                    Pitts, J R, Tracy, C E, King, D E, & Stanley, J T. Solar-induced chemical vapor deposition of diamond-type carbon films.  United States.

Copy to clipboard


                    Pitts, J R, Tracy, C E, King, D E, and Stanley, J T. Tue .  
        "Solar-induced chemical vapor deposition of diamond-type carbon films".  United States.

Copy to clipboard


                    
@article{osti_6954543,

  title        = {Solar-induced chemical vapor deposition of diamond-type carbon films},

  author       = {Pitts, J R and Tracy, C E and King, D E and Stanley, J T},

  abstractNote = {An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1994},

  month        = {9}

}

Copy to clipboard

Patent:

Search for the full text at the U.S. Patent and Trademark Office

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Solar-induced chemical vapor deposition of diamond-type carbon films

Patent Pitts, J Roland [Lakewood, CO]; Tracy, C Edwin [Golden, CO]; King, David E [Lakewood, CO]; ...

An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.
Full Text Available
Diamond nucleation on unscratched silicon substrates coated with various non-diamond carbon films by microwave plasma-enhanced chemical vapor deposition

Journal Article Feng, Z [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)]; Brewer, M A [Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)]; Komvopoulos, K [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)]; ... - Journal of Materials Research; (United States)

The efficacy of various non-diamond carbon films as precursors for diamond nucleation on unscratched silicon substrates was investigated with a conventional microwave plasma-enhanced chemical vapor deposition system. Silicon substrates were partially coated with various carbonaceous substances such as clusters consisting of a mixture of C[sub 60] and C[sub 70], evaporated films of carbon and pure C[sub 70], and hard carbon produced by a vacuum arc deposition technique. For comparison, diamond nucleation on silicon substrates coated with submicrometer-sized diamond particles and uncoated smooth silicon surfaces was also examined under similar conditions. Except for evaporated carbon films, significantly higher diamond nucleation densitiesmore » « less
DOI: https://doi.org/10.1557/JMR.1995.0165
High rate chemical vapor deposition of carbon films using fluorinated gases

Patent Stafford, Byron L [Arvada, CO]; Tracy, C Edwin [Golden, CO]; Benson, David K [Golden, CO]; ...

A high rate, low-temperature deposition of amorphous carbon films is produced by PE-CVD in the presence of a fluorinated or other halide gas. The deposition can be performed at less than 100.degree. C., including ambient room temperature, with a radio frequency plasma assisted chemical vapor deposition process. With less than 6.5 atomic percent fluorine incorporated into the amorphous carbon film, the characteristics of the carbon film, including index of refraction, mass density, optical clarity, and chemical resistance are within fifteen percent (15%) of those characteristics for pure amorphous carbon films, but the deposition rates are high.
Full Text Available
Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

Patent Wang, Qi; Iwaniczko, Eugene

A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.
Full Text Available
Effect of graphitic carbon films on diamond nucleation by microwave-plasma-enhanced chemical-vapor deposition

Journal Article Feng, Z; Komvopoulos, K [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)]; Brown, I G [Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)]; ... - Journal of Applied Physics; (United States)

Diamond nucleation on very smooth (100) silicon substrates coated with thin films of a colloidal graphite suspension was investigated with a microwave-plasma-enhanced chemical-vapor-deposition system. Nucleation densities of the order of 10[sup 6] cm[sup [minus]2] were obtained by coating the substrates with carbon films of thicknesses less than 1 [mu]m. However, very low nucleation densities were obtained with carbon film thicknesses greater than 1 [mu]m. The effect of the carbon film thickness on diamond nucleation was examined by measuring the etching rate of carbon films exposed to a hydrogen plasma and was further interpreted on the basis of scanning electron microscopymore » « less
DOI: https://doi.org/10.1063/1.354636

Similar Records