Global to push GA events into
skip to main content

Title: Thin film hydrogen sensor

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.
Inventors:
; ;
Issue Date:
OSTI Identifier:
6941087
Assignee:
Martin Marietta Energy Systems, Inc., Oak Ridge, TN (United States) PTO; EDB-94-164855
Patent Number(s):
US 5367283; A
Application Number:
PPN: US 7-957337
Contract Number:
AC05-84OR21400
Resource Relation:
Patent File Date: 6 Oct 1992
Country of Publication:
United States
Language:
English
Subject:
08 HYDROGEN; HYDROGEN; MONITORING; PROBES; DESIGN; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; GAS ANALYSIS; OPERATION; PALLADIUM; PALLADIUM ALLOYS; ALLOYS; ELECTRICAL PROPERTIES; ELEMENTS; METALS; NONMETALS; PHYSICAL PROPERTIES; PLATINUM METAL ALLOYS; PLATINUM METALS; TRANSITION ELEMENTS; 080800* - Hydrogen- Properties & Composition