Thin film hydrogen sensor
Abstract
A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 6941087
- Patent Number(s):
- 5367283
- Application Number:
- PPN: US 7-957337
- Assignee:
- Martin Marietta Energy Systems, Inc., Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 6 Oct 1992
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 08 HYDROGEN; HYDROGEN; MONITORING; PROBES; DESIGN; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; GAS ANALYSIS; OPERATION; PALLADIUM; PALLADIUM ALLOYS; ALLOYS; ELECTRICAL PROPERTIES; ELEMENTS; METALS; NONMETALS; PHYSICAL PROPERTIES; PLATINUM METAL ALLOYS; PLATINUM METALS; TRANSITION ELEMENTS; 080800* - Hydrogen- Properties & Composition
Citation Formats
Lauf, R J, Hoffheins, B S, and Fleming, P H. Thin film hydrogen sensor. United States: N. p., 1994.
Web.
Lauf, R J, Hoffheins, B S, & Fleming, P H. Thin film hydrogen sensor. United States.
Lauf, R J, Hoffheins, B S, and Fleming, P H. Tue .
"Thin film hydrogen sensor". United States.
@article{osti_6941087,
title = {Thin film hydrogen sensor},
author = {Lauf, R J and Hoffheins, B S and Fleming, P H},
abstractNote = {A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {11}
}