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Title: Silicon crystal growing by oscillating crucible technique

Abstract

A process for growing silicon crystals from a molten melt comprising oscillating the container during crystal growth is disclosed.

Inventors:
; ;
Issue Date:
OSTI Identifier:
6928048
Application Number:
ON: DE84011038
Assignee:
Dept. of Energy ERA-09-025696; EDB-84-081233
DOE Contract Number:  
AI01-76ET20356
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CRYSTAL GROWTH METHODS; SILICON; CRUCIBLES; ROTATION; ELEMENTS; MOTION; SEMIMETALS 140501* -- Solar Energy Conversion-- Photovoltaic Conversion; 360601 -- Other Materials-- Preparation & Manufacture

Citation Formats

Schwuttke, G.H., Kim, K.M., and Smetana, P. Silicon crystal growing by oscillating crucible technique. United States: N. p., 1983. Web.
Schwuttke, G.H., Kim, K.M., & Smetana, P. Silicon crystal growing by oscillating crucible technique. United States.
Schwuttke, G.H., Kim, K.M., and Smetana, P. Wed . "Silicon crystal growing by oscillating crucible technique". United States.
@article{osti_6928048,
title = {Silicon crystal growing by oscillating crucible technique},
author = {Schwuttke, G.H. and Kim, K.M. and Smetana, P.},
abstractNote = {A process for growing silicon crystals from a molten melt comprising oscillating the container during crystal growth is disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {8}
}