Global to push GA events into
skip to main content

Title: Method for microwave plasma assisted supersonic gas jet deposition of thin films

A thin film is formed on a substrate positioned in a vacuum chamber by use of a gas jet apparatus affixed to a vacuum chamber port and having an outer nozzle with an interior cavity into which carrier gas is fed, an inner nozzle located within the outer nozzle interior cavity into which reactant gas is introduced, a tip of the inner nozzle being recessed from the vacuum chamber port within the outer nozzle interior cavity, and a microwave discharge device configured about the apparatus for generating a discharge in the carrier gas and reactant gas only in a portion of the outer nozzle interior cavity extending from approximately the inner nozzle tip towards the vacuum chamber. A supersonic free jet of carrier gas transports vapor species generated in the microwave discharge to the surface of the substrate to form a thin film on the substrate. The substrate can be translated from the supersonic jet to a second supersonic jet in less time than needed to complete film formation so that the film is chemically composed of chemical reaction products of vapor species in the jets. 5 figs.
Inventors:
;
Issue Date:
OSTI Identifier:
6897079
Assignee:
Jet Process Corp., New Haven, CT (United States) PTO; EDB-94-166946
Patent Number(s):
US 5356672; A
Application Number:
PPN: US 7-521100
Contract Number:
FG02-88ER13818
Resource Relation:
Patent File Date: 9 May 1990
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; THIN FILMS; CHEMICAL VAPOR DEPOSITION; EQUIPMENT; SUPERSONIC FLOW; VACUUM SYSTEMS; VAPOR DEPOSITED COATINGS; CHEMICAL COATING; COATINGS; DEPOSITION; FILMS; FLUID FLOW; SURFACE COATING 360101* -- Metals & Alloys-- Preparation & Fabrication; 360201 -- Ceramics, Cermets, & Refractories-- Preparation & Fabrication