Method for microwave plasma assisted supersonic gas jet deposition of thin films
Abstract
A thin film is formed on a substrate positioned in a vacuum chamber by use of a gas jet apparatus affixed to a vacuum chamber port and having an outer nozzle with an interior cavity into which carrier gas is fed, an inner nozzle located within the outer nozzle interior cavity into which reactant gas is introduced, a tip of the inner nozzle being recessed from the vacuum chamber port within the outer nozzle interior cavity, and a microwave discharge device configured about the apparatus for generating a discharge in the carrier gas and reactant gas only in a portion of the outer nozzle interior cavity extending from approximately the inner nozzle tip towards the vacuum chamber. A supersonic free jet of carrier gas transports vapor species generated in the microwave discharge to the surface of the substrate to form a thin film on the substrate. The substrate can be translated from the supersonic jet to a second supersonic jet in less time than needed to complete film formation so that the film is chemically composed of chemical reaction products of vapor species in the jets. 5 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 6897079
- Patent Number(s):
- 5356672
- Application Number:
- PPN: US 7-521100
- Assignee:
- Jet Process Corp., New Haven, CT (United States)
- DOE Contract Number:
- FG02-88ER13818
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 9 May 1990
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; THIN FILMS; CHEMICAL VAPOR DEPOSITION; EQUIPMENT; SUPERSONIC FLOW; VACUUM SYSTEMS; VAPOR DEPOSITED COATINGS; CHEMICAL COATING; COATINGS; DEPOSITION; FILMS; FLUID FLOW; SURFACE COATING; 360101* - Metals & Alloys- Preparation & Fabrication; 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication
Citation Formats
Schmitt, III, J J, and Halpern, B L. Method for microwave plasma assisted supersonic gas jet deposition of thin films. United States: N. p., 1994.
Web.
Schmitt, III, J J, & Halpern, B L. Method for microwave plasma assisted supersonic gas jet deposition of thin films. United States.
Schmitt, III, J J, and Halpern, B L. Tue .
"Method for microwave plasma assisted supersonic gas jet deposition of thin films". United States.
@article{osti_6897079,
title = {Method for microwave plasma assisted supersonic gas jet deposition of thin films},
author = {Schmitt, III, J J and Halpern, B L},
abstractNote = {A thin film is formed on a substrate positioned in a vacuum chamber by use of a gas jet apparatus affixed to a vacuum chamber port and having an outer nozzle with an interior cavity into which carrier gas is fed, an inner nozzle located within the outer nozzle interior cavity into which reactant gas is introduced, a tip of the inner nozzle being recessed from the vacuum chamber port within the outer nozzle interior cavity, and a microwave discharge device configured about the apparatus for generating a discharge in the carrier gas and reactant gas only in a portion of the outer nozzle interior cavity extending from approximately the inner nozzle tip towards the vacuum chamber. A supersonic free jet of carrier gas transports vapor species generated in the microwave discharge to the surface of the substrate to form a thin film on the substrate. The substrate can be translated from the supersonic jet to a second supersonic jet in less time than needed to complete film formation so that the film is chemically composed of chemical reaction products of vapor species in the jets. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 18 00:00:00 EDT 1994},
month = {Tue Oct 18 00:00:00 EDT 1994}
}