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Title: Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization

Abstract

Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

Inventors:
; ; ;
Issue Date:
OSTI Identifier:
6893589
Patent Number(s):
5356839 A
Application Number:
PPN: US 8-045860
Assignee:
Midwest Research Inst., Kansas City, MO (United States) PTO; EDB-94-167740
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Resource Relation:
Patent File Date: 12 Apr 1993
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COPPER SELENIDES; FABRICATION; GALLIUM SELENIDES; INDIUM SELENIDES; CHEMICAL COMPOSITION; PROCESS CONTROL; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; CHALCOGENIDES; CONTROL; COPPER COMPOUNDS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; SELENIDES; SELENIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS 360601* -- Other Materials-- Preparation & Manufacture

Citation Formats

Tuttle, J.R., Contreras, M.A., Noufi, R., and Albin, D.S. Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization. United States: N. p., 1994. Web.
Tuttle, J.R., Contreras, M.A., Noufi, R., & Albin, D.S. Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization. United States.
Tuttle, J.R., Contreras, M.A., Noufi, R., and Albin, D.S. Tue . "Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization". United States.
@article{osti_6893589,
title = {Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization},
author = {Tuttle, J.R. and Contreras, M.A. and Noufi, R. and Albin, D.S.},
abstractNote = {Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {10}
}