Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization
Abstract
Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 6893589
- Patent Number(s):
- 5356839
- Application Number:
- PPN: US 8-045860
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States)
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 12 Apr 1993
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; COPPER SELENIDES; FABRICATION; GALLIUM SELENIDES; INDIUM SELENIDES; CHEMICAL COMPOSITION; PROCESS CONTROL; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; CHALCOGENIDES; CONTROL; COPPER COMPOUNDS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; SELENIDES; SELENIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; 360601* - Other Materials- Preparation & Manufacture
Citation Formats
Tuttle, J R, Contreras, M A, Noufi, R, and Albin, D S. Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization. United States: N. p., 1994.
Web.
Tuttle, J R, Contreras, M A, Noufi, R, & Albin, D S. Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization. United States.
Tuttle, J R, Contreras, M A, Noufi, R, and Albin, D S. Tue .
"Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization". United States.
@article{osti_6893589,
title = {Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization},
author = {Tuttle, J R and Contreras, M A and Noufi, R and Albin, D S},
abstractNote = {Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 18 00:00:00 EDT 1994},
month = {Tue Oct 18 00:00:00 EDT 1994}
}