Electrically injected visible vertical cavity surface emitting laser diodes
Abstract
Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors. 5 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 6884021
- Patent Number(s):
- 5351256
- Application Number:
- PPN: US 8-055178
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 28 Apr 1993
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; SEMICONDUCTOR LASERS; DESIGN; ALUMINIUM PHOSPHIDES; INDIUM PHOSPHIDES; LASER CAVITIES; LASER MIRRORS; LASER RADIATION; SEMICONDUCTOR DIODES; VISIBLE RADIATION; ALUMINIUM COMPOUNDS; ELECTROMAGNETIC RADIATION; INDIUM COMPOUNDS; LASERS; MIRRORS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; 426002* - Engineering- Lasers & Masers- (1990-)
Citation Formats
Schneider, R P, and Lott, J A. Electrically injected visible vertical cavity surface emitting laser diodes. United States: N. p., 1994.
Web.
Schneider, R P, & Lott, J A. Electrically injected visible vertical cavity surface emitting laser diodes. United States.
Schneider, R P, and Lott, J A. Tue .
"Electrically injected visible vertical cavity surface emitting laser diodes". United States.
@article{osti_6884021,
title = {Electrically injected visible vertical cavity surface emitting laser diodes},
author = {Schneider, R P and Lott, J A},
abstractNote = {Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {9}
}
Search for the full text at the U.S. Patent and Trademark Office
Note: You will be redirected to the USPTO site, which may require a pop-up blocker to be deactivated to view the patent. If so, you will need to manually turn off your browser's pop-up blocker, typically found within the browser settings. (See DOE Patents FAQs for more information.)
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.