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Title: Electrically injected visible vertical cavity surface emitting laser diodes

Abstract

Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors. 5 figs.

Inventors:
;
Issue Date:
OSTI Identifier:
6884021
Patent Number(s):
5351256 A
Application Number:
PPN: US 8-055178
Assignee:
Dept. of Energy, Washington, DC (United States) SNL; EDB-94-153939
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Patent File Date: 28 Apr 1993
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; DESIGN; ALUMINIUM PHOSPHIDES; INDIUM PHOSPHIDES; LASER CAVITIES; LASER MIRRORS; LASER RADIATION; SEMICONDUCTOR DIODES; VISIBLE RADIATION; ALUMINIUM COMPOUNDS; ELECTROMAGNETIC RADIATION; INDIUM COMPOUNDS; LASERS; MIRRORS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS 426002* -- Engineering-- Lasers & Masers-- (1990-)

Citation Formats

Schneider, R.P., and Lott, J.A. Electrically injected visible vertical cavity surface emitting laser diodes. United States: N. p., 1994. Web.
Schneider, R.P., & Lott, J.A. Electrically injected visible vertical cavity surface emitting laser diodes. United States.
Schneider, R.P., and Lott, J.A. Tue . "Electrically injected visible vertical cavity surface emitting laser diodes". United States.
@article{osti_6884021,
title = {Electrically injected visible vertical cavity surface emitting laser diodes},
author = {Schneider, R.P. and Lott, J.A.},
abstractNote = {Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {9}
}