Monolithic high voltage nonlinear transmission line fabrication process
Abstract
A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 6816921
- Patent Number(s):
- 5352627
- Application Number:
- PPN: US 8-058369
- Assignee:
- PTO; EDB-94-168768
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 10 May 1993
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; SEMICONDUCTOR DIODES; FABRICATION; ELECTRICAL INSULATION; GALLIUM ARSENIDES; ION IMPLANTATION; LAYERS; SOLENOIDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRIC COILS; ELECTRICAL EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)
Citation Formats
Cooper, G A. Monolithic high voltage nonlinear transmission line fabrication process. United States: N. p., 1994.
Web.
Cooper, G A. Monolithic high voltage nonlinear transmission line fabrication process. United States.
Cooper, G A. Tue .
"Monolithic high voltage nonlinear transmission line fabrication process". United States.
@article{osti_6816921,
title = {Monolithic high voltage nonlinear transmission line fabrication process},
author = {Cooper, G A},
abstractNote = {A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 04 00:00:00 EDT 1994},
month = {Tue Oct 04 00:00:00 EDT 1994}
}