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Title: Monolithic high voltage nonlinear transmission line fabrication process

Abstract

A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.

Inventors:
Issue Date:
OSTI Identifier:
6816921
Patent Number(s):
5352627 A
Application Number:
PPN: US 8-058369
Assignee:
PTO; EDB-94-168768
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Patent File Date: 10 May 1993
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR DIODES; FABRICATION; ELECTRICAL INSULATION; GALLIUM ARSENIDES; ION IMPLANTATION; LAYERS; SOLENOIDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRIC COILS; ELECTRICAL EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Cooper, G A. Monolithic high voltage nonlinear transmission line fabrication process. United States: N. p., 1994. Web.
Cooper, G A. Monolithic high voltage nonlinear transmission line fabrication process. United States.
Cooper, G A. Tue . "Monolithic high voltage nonlinear transmission line fabrication process". United States.
@article{osti_6816921,
title = {Monolithic high voltage nonlinear transmission line fabrication process},
author = {Cooper, G A},
abstractNote = {A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {10}
}