Crystal face temperature determination means
Abstract
An optically transparent furnace having a detection apparatus with a pedestal enclosed in an evacuated ampule for growing a crystal thereon is disclosed. Temperature differential is provided by a source heater, a base heater and a cold finger such that material migrates from a polycrystalline source material to grow the crystal. A quartz halogen lamp projects a collimated beam onto the crystal and a reflected beam is analyzed by a double monochromator and photomultiplier detection spectrometer and the detected peak position in the reflected energy spectrum of the reflected beam is interpreted to determine surface temperature of the crystal. 3 figs.
- Inventors:
- Issue Date:
- Research Org.:
- EG & G Energy Measurements Inc
- OSTI Identifier:
- 6815283
- Patent Number(s):
- 5365876
- Application Number:
- PPN: US 8-011634
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- DOE Contract Number:
- AC08-88NV10617
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 1 Feb 1993
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION; CRYSTALS; TEMPERATURE MEASUREMENT; CRYSTAL GROWTH; MEASURING METHODS; TEMPERATURE GRADIENTS; VISIBLE RADIATION; ELECTROMAGNETIC RADIATION; RADIATIONS; 440500* - Thermal Instrumentation- (1990-)
Citation Formats
Nason, D O, and Burger, A. Crystal face temperature determination means. United States: N. p., 1994.
Web.
Nason, D O, & Burger, A. Crystal face temperature determination means. United States.
Nason, D O, and Burger, A. Tue .
"Crystal face temperature determination means". United States.
@article{osti_6815283,
title = {Crystal face temperature determination means},
author = {Nason, D O and Burger, A},
abstractNote = {An optically transparent furnace having a detection apparatus with a pedestal enclosed in an evacuated ampule for growing a crystal thereon is disclosed. Temperature differential is provided by a source heater, a base heater and a cold finger such that material migrates from a polycrystalline source material to grow the crystal. A quartz halogen lamp projects a collimated beam onto the crystal and a reflected beam is analyzed by a double monochromator and photomultiplier detection spectrometer and the detected peak position in the reflected energy spectrum of the reflected beam is interpreted to determine surface temperature of the crystal. 3 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {11}
}
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