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Title: Substrate solder barriers for semiconductor epilayer growth

Abstract

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
OSTI Identifier:
6808290
Patent Number(s):
6111488
Assignee:
SNL; EDB-88-179048
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01H - ELECTRIC SWITCHES
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; PROTECTIVE COATINGS; GOLD; SPUTTERING; TUNGSTEN CARBIDES; INDIUM; INVENTIONS; LAYERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; ARSENIC COMPOUNDS; ARSENIDES; CARBIDES; CARBON COMPOUNDS; COATINGS; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; METALS; PNICTIDES; REFRACTORY METAL COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS; 420800* - Engineering- Electronic Circuits & Devices- (-1989); 360204 - Ceramics, Cermets, & Refractories- Physical Properties; 360601 - Other Materials- Preparation & Manufacture

Citation Formats

Drummond, T J, Ginley, D S, and Zipperian, T E. Substrate solder barriers for semiconductor epilayer growth. United States: N. p., 1987. Web.
Drummond, T J, Ginley, D S, & Zipperian, T E. Substrate solder barriers for semiconductor epilayer growth. United States.
Drummond, T J, Ginley, D S, and Zipperian, T E. Fri . "Substrate solder barriers for semiconductor epilayer growth". United States.
@article{osti_6808290,
title = {Substrate solder barriers for semiconductor epilayer growth},
author = {Drummond, T J and Ginley, D S and Zipperian, T E},
abstractNote = {During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {10}
}