skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Focused ion beam system

Abstract

A focused ion beam (FIB) system produces a final beam spot size down to 0.1 {mu}m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 m or less. 13 figs.

Inventors:
; ; ;
Issue Date:
Research Org.:
University of California
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
678590
Patent Number(s):
5,945,677
Application Number:
PAN: 9-225,996
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 426000; PA: EDB-99:085601; SN: 99002124477
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 31 Aug 1999
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; ION BEAMS; ION SOURCES; DESIGN; USES; SEMICONDUCTOR DEVICES; FABRICATION; CRYSTAL DOPING; MASKING

Citation Formats

Leung, K., Gough, R.A., Ji, Q., and Lee, Y.Y. Focused ion beam system. United States: N. p., 1999. Web.
Leung, K., Gough, R.A., Ji, Q., & Lee, Y.Y. Focused ion beam system. United States.
Leung, K., Gough, R.A., Ji, Q., and Lee, Y.Y. Tue . "Focused ion beam system". United States.
@article{osti_678590,
title = {Focused ion beam system},
author = {Leung, K. and Gough, R.A. and Ji, Q. and Lee, Y.Y.},
abstractNote = {A focused ion beam (FIB) system produces a final beam spot size down to 0.1 {mu}m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 m or less. 13 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {8}
}