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Title: High-efficiency solar cell and method for fabrication

Abstract

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

Inventors:
;
Issue Date:
Research Org.:
Sandia Corporation
Sponsoring Org.:
USDOE, Washington, DC (United States); Department of the Air Force, Washington, DC (United States)
OSTI Identifier:
678548
Patent Number(s):
5,944,913
Application Number:
PAN: 8-978,658
Assignee:
Sandia Corp., Albuquerque, NM (United States) SNL; SCA: 140501; PA: EDB-99:083950; SN: 99002124482
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 31 Aug 1999
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SOLAR CELLS; FABRICATION; INDIUM ARSENIDES; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; GALLIUM PHOSPHIDES; ALUMINIUM PHOSPHIDES; INDIUM NITRIDES; GALLIUM NITRIDES; QUANTUM EFFICIENCY; ENERGY GAP

Citation Formats

Hou, H.Q., and Reinhardt, K.C. High-efficiency solar cell and method for fabrication. United States: N. p., 1999. Web.
Hou, H.Q., & Reinhardt, K.C. High-efficiency solar cell and method for fabrication. United States.
Hou, H.Q., and Reinhardt, K.C. Tue . "High-efficiency solar cell and method for fabrication". United States.
@article{osti_678548,
title = {High-efficiency solar cell and method for fabrication},
author = {Hou, H.Q. and Reinhardt, K.C.},
abstractNote = {A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {8}
}