High-efficiency solar cell and method for fabrication
Abstract
A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States); Department of the Air Force, Washington, DC (United States)
- OSTI Identifier:
- 678548
- Patent Number(s):
- 5944913
- Application Number:
- PAN: 8-978,658
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 31 Aug 1999
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; SOLAR CELLS; FABRICATION; INDIUM ARSENIDES; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; GALLIUM PHOSPHIDES; ALUMINIUM PHOSPHIDES; INDIUM NITRIDES; GALLIUM NITRIDES; QUANTUM EFFICIENCY; ENERGY GAP
Citation Formats
Hou, H Q, and Reinhardt, K C. High-efficiency solar cell and method for fabrication. United States: N. p., 1999.
Web.
Hou, H Q, & Reinhardt, K C. High-efficiency solar cell and method for fabrication. United States.
Hou, H Q, and Reinhardt, K C. Tue .
"High-efficiency solar cell and method for fabrication". United States.
@article{osti_678548,
title = {High-efficiency solar cell and method for fabrication},
author = {Hou, H Q and Reinhardt, K C},
abstractNote = {A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {8}
}