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Title: Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

Abstract

Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

Inventors:
Issue Date:
OSTI Identifier:
6763361
Application Number:
ON: DE84014515
Assignee:
Dept. of Energy ERA-09-035308; EDB-84-116118
DOE Contract Number:  
AC02-77CH00178
Resource Type:
Patent
Resource Relation:
Other Information: Portions are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; GALLIUM ARSENIDE SOLAR CELLS; ELECTRIC CONTACTS; SILVER; DEPOSITION; ANNEALING; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; DIRECT ENERGY CONVERTERS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; HEAT TREATMENTS; MATERIALS; METALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SOLAR EQUIPMENT; TRANSITION ELEMENTS 140501* -- Solar Energy Conversion-- Photovoltaic Conversion; 360101 -- Metals & Alloys-- Preparation & Fabrication

Citation Formats

Hogan, S.J. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials. United States: N. p., 1983. Web.
Hogan, S.J. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials. United States.
Hogan, S.J. Sun . "Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials". United States.
@article{osti_6763361,
title = {Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials},
author = {Hogan, S.J.},
abstractNote = {Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {3}
}