Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials
Abstract
Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 6763361
- Application Number:
- ON: DE84014515
- Assignee:
- Dept. of Energy
- DOE Contract Number:
- AC02-77CH00178
- Resource Type:
- Patent
- Resource Relation:
- Other Information: Portions are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; GALLIUM ARSENIDE SOLAR CELLS; ELECTRIC CONTACTS; SILVER; DEPOSITION; ANNEALING; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; DIRECT ENERGY CONVERTERS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; HEAT TREATMENTS; MATERIALS; METALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SOLAR EQUIPMENT; TRANSITION ELEMENTS; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360101 - Metals & Alloys- Preparation & Fabrication
Citation Formats
Hogan, S J. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials. United States: N. p., 1983.
Web.
Hogan, S J. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials. United States.
Hogan, S J. Sun .
"Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials". United States.
@article{osti_6763361,
title = {Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials},
author = {Hogan, S J},
abstractNote = {Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {3}
}
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