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Title: Method and apparatus for laser/plasma chemical processing of substrates

Abstract

A process for the modification of substrate surfaces is described, wherein etching or deposition at a surface occurs only in the presence of both reactive species and a directed beam of coherent light.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
OSTI Identifier:
6759913
Application Number:
ON: DE87007260
Assignee:
Dept. of Energy
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SUBSTRATES; SURFACE TREATMENTS; LASER RADIATION; ALUMINIUM; DEPOSITION; EPITAXY; ETCHING; GALLIUM ARSENIDES; IRRADIATION; SILANES; TUNGSTEN; ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; GALLIUM COMPOUNDS; HYDRIDES; HYDROGEN COMPOUNDS; METALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; PNICTIDES; RADIATIONS; SILICON COMPOUNDS; SURFACE FINISHING; TRANSITION ELEMENTS; 420800* - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Gee, J M, and Hargis, Jr, P J. Method and apparatus for laser/plasma chemical processing of substrates. United States: N. p., 1984. Web.
Gee, J M, & Hargis, Jr, P J. Method and apparatus for laser/plasma chemical processing of substrates. United States.
Gee, J M, and Hargis, Jr, P J. Sat . "Method and apparatus for laser/plasma chemical processing of substrates". United States.
@article{osti_6759913,
title = {Method and apparatus for laser/plasma chemical processing of substrates},
author = {Gee, J M and Hargis, Jr, P J},
abstractNote = {A process for the modification of substrate surfaces is described, wherein etching or deposition at a surface occurs only in the presence of both reactive species and a directed beam of coherent light.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {7}
}