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Title: Piezoelectric shear wave resonator and method of making same

Abstract

An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppM//sup 0/C.

Inventors:
; ;
Issue Date:
OSTI Identifier:
6752768
Application Number:
ON: DE84014528
Assignee:
Dept. of Energy ERA-09-035981; EDB-84-119273
DOE Contract Number:  
W-7405-ENG-82
Resource Type:
Patent
Resource Relation:
Other Information: Portions are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; RESONATORS; PIEZOELECTRICITY; FILMS; SPUTTERING; TRANSDUCERS; ELECTRICITY; ELECTRONIC EQUIPMENT; EQUIPMENT 420200* -- Engineering-- Facilities, Equipment, & Techniques

Citation Formats

Wang, J.S., Lakin, K.M., and Landin, A.R. Piezoelectric shear wave resonator and method of making same. United States: N. p., 1983. Web.
Wang, J.S., Lakin, K.M., & Landin, A.R. Piezoelectric shear wave resonator and method of making same. United States.
Wang, J.S., Lakin, K.M., and Landin, A.R. Tue . "Piezoelectric shear wave resonator and method of making same". United States.
@article{osti_6752768,
title = {Piezoelectric shear wave resonator and method of making same},
author = {Wang, J.S. and Lakin, K.M. and Landin, A.R.},
abstractNote = {An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppM//sup 0/C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {10}
}