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Title: Use of chemical mechanical polishing in micromachining

Abstract

A process for removing topography effects during fabrication of micromachines. A sacrificial oxide layer is deposited over a level containing functional elements with etched valleys between the elements such that the sacrificial layer has sufficient thickness to fill the valleys and extend in thickness upwards to the extent that the lowest point on the upper surface of the oxide layer is at least as high as the top surface of the functional elements in the covered level. The sacrificial oxide layer is then polished down and planarized by chemical-mechanical polishing. Another layer of functional elements is then formed upon this new planarized surface. 4 figs.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
672708
Patent Number(s):
5804084
Application Number:
PAN: 8-729,122
Assignee:
Sandia Corp., Albuquerque, NM (United States)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 8 Sep 1998
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; MICROELECTRONICS; ENGINES; FABRICATION; MINIATURIZATION; CHEMICAL POLISHING; MECHANICAL POLISHING; MACHINING

Citation Formats

Nasby, R D, Hetherington, D L, Sniegowski, J J, McWhorter, P J, and Apblett, C A. Use of chemical mechanical polishing in micromachining. United States: N. p., 1998. Web.
Nasby, R D, Hetherington, D L, Sniegowski, J J, McWhorter, P J, & Apblett, C A. Use of chemical mechanical polishing in micromachining. United States.
Nasby, R D, Hetherington, D L, Sniegowski, J J, McWhorter, P J, and Apblett, C A. Tue . "Use of chemical mechanical polishing in micromachining". United States.
@article{osti_672708,
title = {Use of chemical mechanical polishing in micromachining},
author = {Nasby, R D and Hetherington, D L and Sniegowski, J J and McWhorter, P J and Apblett, C A},
abstractNote = {A process for removing topography effects during fabrication of micromachines. A sacrificial oxide layer is deposited over a level containing functional elements with etched valleys between the elements such that the sacrificial layer has sufficient thickness to fill the valleys and extend in thickness upwards to the extent that the lowest point on the upper surface of the oxide layer is at least as high as the top surface of the functional elements in the covered level. The sacrificial oxide layer is then polished down and planarized by chemical-mechanical polishing. Another layer of functional elements is then formed upon this new planarized surface. 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {9}
}

Patent:
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