GaAs photoconductive semiconductor switch
Abstract
A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 672705
- Patent Number(s):
- 5804815
- Application Number:
- PAN: 8-675,975
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 8 Sep 1998
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR SWITCHES; PHOTOCONDUCTIVITY; GALLIUM ARSENIDES; DESIGN; LEAKAGE CURRENT
Citation Formats
Loubriel, G M, Baca, A G, and Zutavern, F J. GaAs photoconductive semiconductor switch. United States: N. p., 1998.
Web.
Loubriel, G M, Baca, A G, & Zutavern, F J. GaAs photoconductive semiconductor switch. United States.
Loubriel, G M, Baca, A G, and Zutavern, F J. Tue .
"GaAs photoconductive semiconductor switch". United States.
@article{osti_672705,
title = {GaAs photoconductive semiconductor switch},
author = {Loubriel, G M and Baca, A G and Zutavern, F J},
abstractNote = {A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {9}
}
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