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Title: GaAs photoconductive semiconductor switch

Abstract

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia Corporation
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
672705
Patent Number(s):
5,804,815
Application Number:
PAN: 8-675,975
Assignee:
Sandia Corp., Albuquerque, NM (United States) SNL; SCA: 426000; PA: EDB-98:120783; SN: 98002026851
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 8 Sep 1998
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR SWITCHES; PHOTOCONDUCTIVITY; GALLIUM ARSENIDES; DESIGN; LEAKAGE CURRENT

Citation Formats

Loubriel, G.M., Baca, A.G., and Zutavern, F.J. GaAs photoconductive semiconductor switch. United States: N. p., 1998. Web.
Loubriel, G.M., Baca, A.G., & Zutavern, F.J. GaAs photoconductive semiconductor switch. United States.
Loubriel, G.M., Baca, A.G., and Zutavern, F.J. Tue . "GaAs photoconductive semiconductor switch". United States.
@article{osti_672705,
title = {GaAs photoconductive semiconductor switch},
author = {Loubriel, G.M. and Baca, A.G. and Zutavern, F.J.},
abstractNote = {A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {9}
}