Ringfield lithographic camera
Abstract
A projection lithography camera is presented with a wide ringfield optimized so as to make efficient use of extreme ultraviolet radiation from a large area radiation source (e.g., D{sub source} {approx_equal} 0.5 mm). The camera comprises four aspheric mirrors optically arranged on a common axis of symmetry. The camera includes an aperture stop that is accessible through a plurality of partial aperture stops to synthesize the theoretical aperture stop. Radiation from a mask is focused to form a reduced image on a wafer, relative to the mask, by reflection from the four aspheric mirrors. 11 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 672700
- Patent Number(s):
- 5805365
- Application Number:
- PAN: 8-542,411
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 8 Sep 1998
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; MASKING; MICROELECTRONIC CIRCUITS; CAMERAS; EXTREME ULTRAVIOLET RADIATION; DESIGN; MIRRORS
Citation Formats
Sweatt, W C. Ringfield lithographic camera. United States: N. p., 1998.
Web.
Sweatt, W C. Ringfield lithographic camera. United States.
Sweatt, W C. Tue .
"Ringfield lithographic camera". United States.
@article{osti_672700,
title = {Ringfield lithographic camera},
author = {Sweatt, W C},
abstractNote = {A projection lithography camera is presented with a wide ringfield optimized so as to make efficient use of extreme ultraviolet radiation from a large area radiation source (e.g., D{sub source} {approx_equal} 0.5 mm). The camera comprises four aspheric mirrors optically arranged on a common axis of symmetry. The camera includes an aperture stop that is accessible through a plurality of partial aperture stops to synthesize the theoretical aperture stop. Radiation from a mask is focused to form a reduced image on a wafer, relative to the mask, by reflection from the four aspheric mirrors. 11 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {9}
}
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