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Title: Method for dry etching of transition metals

Abstract

A method for dry etching of transition metals is disclosed. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorus-containing {pi}-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/{pi}-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the {pi}-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the {pi}-acceptor ligand for forming the volatile transition metal/{pi}-acceptor ligand complex.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
672694
Patent Number(s):
5,814,238
Application Number:
PAN: 8-542,149
Assignee:
Sandia Corp., Albuquerque, NM (United States)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 29 Sep 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ETCHING; TRANSITION ELEMENTS; TRANSITION ELEMENT ALLOYS; VOLATILE MATTER; LIGANDS; CHEMICAL REACTIONS; REACTION INTERMEDIATES

Citation Formats

Ashby, C I.H., Baca, A G, Esherick, P, Parmeter, J E, Rieger, D J, and Shul, R J. Method for dry etching of transition metals. United States: N. p., 1998. Web.
Ashby, C I.H., Baca, A G, Esherick, P, Parmeter, J E, Rieger, D J, & Shul, R J. Method for dry etching of transition metals. United States.
Ashby, C I.H., Baca, A G, Esherick, P, Parmeter, J E, Rieger, D J, and Shul, R J. Tue . "Method for dry etching of transition metals". United States.
@article{osti_672694,
title = {Method for dry etching of transition metals},
author = {Ashby, C I.H. and Baca, A G and Esherick, P and Parmeter, J E and Rieger, D J and Shul, R J},
abstractNote = {A method for dry etching of transition metals is disclosed. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorus-containing {pi}-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/{pi}-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the {pi}-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the {pi}-acceptor ligand for forming the volatile transition metal/{pi}-acceptor ligand complex.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {9}
}