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Title: Method for fabricating silicon cells

Abstract

A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

Inventors:
; ;
Issue Date:
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
672668
Patent Number(s):
5792280
Application Number:
PAN: 8-820,969
Assignee:
Sandia Corp., Albuquerque, NM (United States)
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 11 Aug 1998
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON SOLAR CELLS; FABRICATION; QUANTUM EFFICIENCY; SILICON; PASSIVATION

Citation Formats

Ruby, D S, Basore, P A, and Schubert, W K. Method for fabricating silicon cells. United States: N. p., 1998. Web.
Ruby, D S, Basore, P A, & Schubert, W K. Method for fabricating silicon cells. United States.
Ruby, D S, Basore, P A, and Schubert, W K. Tue . "Method for fabricating silicon cells". United States.
@article{osti_672668,
title = {Method for fabricating silicon cells},
author = {Ruby, D S and Basore, P A and Schubert, W K},
abstractNote = {A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {8}
}