Method for fabricating silicon cells
Abstract
A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.
- Inventors:
- Issue Date:
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 672668
- Patent Number(s):
- 5792280
- Application Number:
- PAN: 8-820,969
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 11 Aug 1998
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON SOLAR CELLS; FABRICATION; QUANTUM EFFICIENCY; SILICON; PASSIVATION
Citation Formats
Ruby, D S, Basore, P A, and Schubert, W K. Method for fabricating silicon cells. United States: N. p., 1998.
Web.
Ruby, D S, Basore, P A, & Schubert, W K. Method for fabricating silicon cells. United States.
Ruby, D S, Basore, P A, and Schubert, W K. Tue .
"Method for fabricating silicon cells". United States.
@article{osti_672668,
title = {Method for fabricating silicon cells},
author = {Ruby, D S and Basore, P A and Schubert, W K},
abstractNote = {A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {8}
}