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Title: Boron doping a semiconductor particle

Abstract

A method of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried, with the boron film then being driven into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out into piles and melted/fused with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements. 2 figs.

Inventors:
; ;
Issue Date:
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
672613
Patent Number(s):
5763320
Application Number:
PAN: 8-570,070
Assignee:
PTO; SCA: 360601; PA: EDB-98:119966; SN: 98002024913
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 9 Jun 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; BORON; CRYSTAL DOPING; BORIC ACID; SILICON; P-TYPE CONDUCTORS

Citation Formats

Stevens, G D, Reynolds, J S, and Brown, L K. Boron doping a semiconductor particle. United States: N. p., 1998. Web.
Stevens, G D, Reynolds, J S, & Brown, L K. Boron doping a semiconductor particle. United States.
Stevens, G D, Reynolds, J S, and Brown, L K. Tue . "Boron doping a semiconductor particle". United States.
@article{osti_672613,
title = {Boron doping a semiconductor particle},
author = {Stevens, G D and Reynolds, J S and Brown, L K},
abstractNote = {A method of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried, with the boron film then being driven into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out into piles and melted/fused with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {6}
}