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Title: Growth of oxide exchange bias layers

Abstract

An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bias layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200 C, the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 {angstrom}/sec. The resulting NiO film was amorphous. 4 figs.

Inventors:
;
Issue Date:
Research Org.:
Univ. of California (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
672582
Patent Number(s):
5783262
Application Number:
PAN: 8-762,087
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 21 Jul 1998
Country of Publication:
United States
Language:
English
Subject:
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; NICKEL OXIDES; COBALT OXIDES; FABRICATION; ANTIFERROMAGNETIC MATERIALS; SPUTTERING; ION BEAMS; USES; AMORPHOUS STATE

Citation Formats

Chaiken, A, and Michel, R P. Growth of oxide exchange bias layers. United States: N. p., 1998. Web.
Chaiken, A, & Michel, R P. Growth of oxide exchange bias layers. United States.
Chaiken, A, and Michel, R P. Tue . "Growth of oxide exchange bias layers". United States.
@article{osti_672582,
title = {Growth of oxide exchange bias layers},
author = {Chaiken, A and Michel, R P},
abstractNote = {An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bias layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200 C, the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 {angstrom}/sec. The resulting NiO film was amorphous. 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {7}
}