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Title: Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

Abstract

A method is disclosed for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer. 5 figs.

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
Sandia Corporation
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
672576
Patent Number(s):
5,786,231
Application Number:
PAN: 8-567,679
Assignee:
Sandia Corp., Albuquerque, NM (United States) SNL; SCA: 426000; PA: EDB-98:120803; SN: 98002024806
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 28 Jul 1998
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR MATERIALS; SUBSTRATES; INTEGRATED CIRCUITS; FABRICATION; QUALITY CONTROL; CRYSTAL DEFECTS; ANNEALING; ELECTRICAL PROPERTIES

Citation Formats

Warren, W.L., Vanheusden, K.J.R., Schwank, J.R., Fleetwood, D.M., Shaneyfelt, M.R., Winokur, P.S., and Devine, R.A.B. Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer. United States: N. p., 1998. Web.
Warren, W.L., Vanheusden, K.J.R., Schwank, J.R., Fleetwood, D.M., Shaneyfelt, M.R., Winokur, P.S., & Devine, R.A.B. Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer. United States.
Warren, W.L., Vanheusden, K.J.R., Schwank, J.R., Fleetwood, D.M., Shaneyfelt, M.R., Winokur, P.S., and Devine, R.A.B. Tue . "Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer". United States.
@article{osti_672576,
title = {Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer},
author = {Warren, W.L. and Vanheusden, K.J.R. and Schwank, J.R. and Fleetwood, D.M. and Shaneyfelt, M.R. and Winokur, P.S. and Devine, R.A.B.},
abstractNote = {A method is disclosed for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {7}
}