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Title: Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using ``safe`` silicon source gas

Abstract

A method is described for producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament. 7 figs.

Inventors:
; ;
Issue Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
672509
Patent Number(s):
5776819
Application Number:
PAN: 8-222,720
Assignee:
Midwest Research Inst., Kansas City, MO (United States)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 7 Jul 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; AMORPHOUS STATE; SILANES; CHEMICAL VAPOR DEPOSITION; SAFETY ENGINEERING; CHEMICAL REACTORS

Citation Formats

Mahan, A. H., Molenbroek, E. C., and Nelson, B. P. Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using ``safe`` silicon source gas. United States: N. p., 1998. Web.
Mahan, A. H., Molenbroek, E. C., & Nelson, B. P. Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using ``safe`` silicon source gas. United States.
Mahan, A. H., Molenbroek, E. C., and Nelson, B. P. Tue . "Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using ``safe`` silicon source gas". United States.
@article{osti_672509,
title = {Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using ``safe`` silicon source gas},
author = {Mahan, A. H. and Molenbroek, E. C. and Nelson, B. P.},
abstractNote = {A method is described for producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament. 7 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {7}
}

Patent:
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