Fluorination of amorphous thin-film materials with xenon fluoride
Abstract
A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.
- Inventors:
- Issue Date:
- Research Org.:
- Solar Energy Research Inst. (SERI), Golden, CO (United States)
- OSTI Identifier:
- 6710874
- Patent Number(s):
- 6045920
- Application Number:
- ON: DE89000211
- Assignee:
- Dept. of Energy
- Patent Classifications (CPCs):
-
G - PHYSICS G03 - PHOTOGRAPHY G03G - ELECTROGRAPHY
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; FLUORINATION; AMORPHOUS STATE; DEPOSITION; DESIGN; INVENTIONS; THIN FILMS; XENON FLUORIDES; CHEMICAL REACTIONS; FILMS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; HALOGENATION; MATERIALS; RARE GAS COMPOUNDS; XENON COMPOUNDS; 360601* - Other Materials- Preparation & Manufacture
Citation Formats
Weil, R B. Fluorination of amorphous thin-film materials with xenon fluoride. United States: N. p., 1987.
Web.
Weil, R B. Fluorination of amorphous thin-film materials with xenon fluoride. United States.
Weil, R B. Fri .
"Fluorination of amorphous thin-film materials with xenon fluoride". United States.
@article{osti_6710874,
title = {Fluorination of amorphous thin-film materials with xenon fluoride},
author = {Weil, R B},
abstractNote = {A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri May 01 00:00:00 EDT 1987},
month = {Fri May 01 00:00:00 EDT 1987}
}
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