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Title: Ferromagnetic thin films

A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.
Inventors:
Issue Date:
OSTI Identifier:
6661588
Assignee:
University of California, Oakland, CA (United States) PTO; EDB-95-029744
Patent Number(s):
US 5374472; A
Application Number:
PPN: US 8-177644
Contract Number:
AC03-76SF00098
Resource Relation:
Patent File Date: 4 Jan 1994
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPOSITE MATERIALS; FABRICATION; MAGNETIC PROPERTIES; FERROMAGNETIC MATERIALS; GALLIUM ALLOYS; GALLIUM ARSENIDES; MANGANESE ALLOYS; LAYERS; ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; MAGNETIC MATERIALS; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES 360601* -- Other Materials-- Preparation & Manufacture; 360606 -- Other Materials-- Physical Properties-- (1992-)