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Title: Ferromagnetic thin films

Abstract

A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

Inventors:
Issue Date:
OSTI Identifier:
6661588
Patent Number(s):
5374472 A
Application Number:
PPN: US 8-177644
Assignee:
University of California, Oakland, CA (United States)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Resource Relation:
Patent File Date: 4 Jan 1994
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPOSITE MATERIALS; FABRICATION; MAGNETIC PROPERTIES; FERROMAGNETIC MATERIALS; GALLIUM ALLOYS; GALLIUM ARSENIDES; MANGANESE ALLOYS; LAYERS; ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; MAGNETIC MATERIALS; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES; 360601* - Other Materials- Preparation & Manufacture; 360606 - Other Materials- Physical Properties- (1992-)

Citation Formats

Krishnan, K M. Ferromagnetic thin films. United States: N. p., 1994. Web.
Krishnan, K M. Ferromagnetic thin films. United States.
Krishnan, K M. Tue . "Ferromagnetic thin films". United States.
@article{osti_6661588,
title = {Ferromagnetic thin films},
author = {Krishnan, K M},
abstractNote = {A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {12}
}