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Title: Method of deposition by molecular beam epitaxy

A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.
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Issue Date:
OSTI Identifier:
Sandia National Laboratories, Albuquerque, NM (United States) SNL; EDB-95-029739
Patent Number(s):
US 5379719; A
Application Number:
PPN: US 8-097500
Contract Number:
Resource Relation:
Patent File Date: 26 Jul 1993
Country of Publication:
United States
36 MATERIALS SCIENCE; MATERIALS; MOLECULAR BEAM EPITAXY; CHEMICAL COMPOSITION; CRYSTAL GROWTH; TIME DEPENDENCE; EPITAXY 360601* -- Other Materials-- Preparation & Manufacture; 360201 -- Ceramics, Cermets, & Refractories-- Preparation & Fabrication; 360101 -- Metals & Alloys-- Preparation & Fabrication