skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method of deposition by molecular beam epitaxy

Abstract

A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

Inventors:
; ;
Issue Date:
OSTI Identifier:
6654749
Patent Number(s):
5379719 A
Application Number:
PPN: US 8-097500
Assignee:
Sandia National Laboratories, Albuquerque, NM (United States)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Patent File Date: 26 Jul 1993
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; MATERIALS; MOLECULAR BEAM EPITAXY; CHEMICAL COMPOSITION; CRYSTAL GROWTH; TIME DEPENDENCE; EPITAXY; 360601* - Other Materials- Preparation & Manufacture; 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 360101 - Metals & Alloys- Preparation & Fabrication

Citation Formats

Chalmers, S A, Killeen, K P, and Lear, K L. Method of deposition by molecular beam epitaxy. United States: N. p., 1995. Web.
Chalmers, S A, Killeen, K P, & Lear, K L. Method of deposition by molecular beam epitaxy. United States.
Chalmers, S A, Killeen, K P, and Lear, K L. Tue . "Method of deposition by molecular beam epitaxy". United States.
@article{osti_6654749,
title = {Method of deposition by molecular beam epitaxy},
author = {Chalmers, S A and Killeen, K P and Lear, K L},
abstractNote = {A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}