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Title: Photosensitivity enhancement of PLZT ceramics by positive ion implantation

Abstract

The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Ions that are implanted include H/sup +/, He/sup +/, Ar/sup +/, and a preferred co-implant of Ar/sup +/ and Ne/sup +/. The positive ion implantation advantageously serves to shift the band gap energy threshold of the PLZT material from near-uv light to visible blue light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to these positive ions of sufficient density and with sufficient energy to provide an image. The PLZT material may have a lanthanum content ranging from 5 to 10%; a lead zirconate content ranging from 62 to 70 mole %; and a lead titanate content ranging from 38 to 30%. The region of ion implantation is in a range from 0.1 to 2 microns below the surface of the PLZT plate. Density of ions is in the range from 1 xmore » 10/sup 12/ to 1 x 10/sup 17/ ions/cm/sup 2/ and having an energy in the range from 100 to 500 keV.« less

Inventors:
;
Issue Date:
OSTI Identifier:
6575363
Assignee:
Dept. of Energy TIC; ERA-06-016288; EDB-81-048574
DOE Contract Number:  
AT(29-1)-789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; LANTHANUM COMPOUNDS; ION IMPLANTATION; PHOTOSENSITIVITY; LEAD COMPOUNDS; TITANATES; ZIRCONATES; ARGON IONS; CERAMICS; FABRICATION; HELIUM IONS; HYDROGEN IONS; KEV RANGE 100-1000; NEON IONS; CHARGED PARTICLES; ENERGY RANGE; IONS; KEV RANGE; OXYGEN COMPOUNDS; RARE EARTH COMPOUNDS; SENSITIVITY; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS 656000* -- Condensed Matter Physics; 360601 -- Other Materials-- Preparation & Manufacture

Citation Formats

Peercy, P.S., and Land, C.E. Photosensitivity enhancement of PLZT ceramics by positive ion implantation. United States: N. p., 1980. Web.
Peercy, P.S., & Land, C.E. Photosensitivity enhancement of PLZT ceramics by positive ion implantation. United States.
Peercy, P.S., and Land, C.E. Fri . "Photosensitivity enhancement of PLZT ceramics by positive ion implantation". United States.
@article{osti_6575363,
title = {Photosensitivity enhancement of PLZT ceramics by positive ion implantation},
author = {Peercy, P.S. and Land, C.E.},
abstractNote = {The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Ions that are implanted include H/sup +/, He/sup +/, Ar/sup +/, and a preferred co-implant of Ar/sup +/ and Ne/sup +/. The positive ion implantation advantageously serves to shift the band gap energy threshold of the PLZT material from near-uv light to visible blue light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to these positive ions of sufficient density and with sufficient energy to provide an image. The PLZT material may have a lanthanum content ranging from 5 to 10%; a lead zirconate content ranging from 62 to 70 mole %; and a lead titanate content ranging from 38 to 30%. The region of ion implantation is in a range from 0.1 to 2 microns below the surface of the PLZT plate. Density of ions is in the range from 1 x 10/sup 12/ to 1 x 10/sup 17/ ions/cm/sup 2/ and having an energy in the range from 100 to 500 keV.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {6}
}