Method of deposition of silicon carbide layers on substrates

Angelini, P; DeVore, C E; Lackey, W J; Blanco, R E; Stinton, D P

Title: Method of deposition of silicon carbide layers on substrates

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Abstract

A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at 800 to 1050/sup 0/C when the substrates have been confined within a suitable coating environment.

Inventors:: Angelini, P; DeVore, C E; Lackey, W J; Blanco, R E; Stinton, D P

Issue Date:: 1982-03-19

OSTI Identifier:: 6509192

Application Number:: ON: DE83006873

Assignee:: EDB-83-048396

DOE Contract Number:: W-7405-ENG-36

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE WASTES FROM NUCLEAR FACILITIES; 36 MATERIALS SCIENCE; RADIOACTIVE WASTES; SURFACE COATING; SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; PARTICLES; SILANES; CARBIDES; CARBON COMPOUNDS; CHEMICAL COATING; DEPOSITION; HYDRIDES; HYDROGEN COMPOUNDS; MATERIALS; RADIOACTIVE MATERIALS; SILICON COMPOUNDS; WASTES; 052001* - Nuclear Fuels- Waste Processing; 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats


                    Angelini, P, DeVore, C E, Lackey, W J, Blanco, R E, and Stinton, D P. Method of deposition of silicon carbide layers on substrates.  United States: N. p., 1982. 
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                    Angelini, P, DeVore, C E, Lackey, W J, Blanco, R E, & Stinton, D P. Method of deposition of silicon carbide layers on substrates.  United States.

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                    Angelini, P, DeVore, C E, Lackey, W J, Blanco, R E, and Stinton, D P. Fri .  
        "Method of deposition of silicon carbide layers on substrates".  United States.

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@article{osti_6509192,

  title        = {Method of deposition of silicon carbide layers on substrates},

  author       = {Angelini, P and DeVore, C E and Lackey, W J and Blanco, R E and Stinton, D P},

  abstractNote = {A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at 800 to 1050/sup 0/C when the substrates have been confined within a suitable coating environment.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1982},

  month        = {3}

}

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