Process for producing silicon
Abstract
A process of producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 6467426
- Application Number:
- ON: DE83010506
- Assignee:
- EDB-83-074126
- DOE Contract Number:
- AC02-77CH00178
- Resource Type:
- Patent
- Resource Relation:
- Other Information: Portions are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; ELECTROPLATING; ANODES; CATHODES; COPPER ALLOYS; ELECTROLYTES; PURIFICATION; ALLOYS; DEPOSITION; ELECTRODEPOSITION; ELECTRODES; ELECTROLYSIS; ELEMENTS; LYSIS; PLATING; SEMIMETALS; SURFACE COATING; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture
Citation Formats
Olson, J M, and Carleton, K L. Process for producing silicon. United States: N. p., 1982.
Web.
Olson, J M, & Carleton, K L. Process for producing silicon. United States.
Olson, J M, and Carleton, K L. Thu .
"Process for producing silicon". United States.
@article{osti_6467426,
title = {Process for producing silicon},
author = {Olson, J M and Carleton, K L},
abstractNote = {A process of producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {6}
}