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Title: Confined ion beam sputtering device and method

Abstract

A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

Inventors:
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
OSTI Identifier:
6444969
Application Number:
ON: DE87007221
Assignee:
Dept. of Energy
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; SPUTTERING; CLADDING; DEPOSITS; FUEL ELEMENTS; ION BEAM TARGETS; ION BEAMS; ION SOURCES; SUBSTRATES; BEAMS; DEPOSITION; REACTOR COMPONENTS; SURFACE COATING; TARGETS; 430300* - Particle Accelerators- Auxiliaries & Components

Citation Formats

Sharp, D J. Confined ion beam sputtering device and method. United States: N. p., 1986. Web.
Sharp, D J. Confined ion beam sputtering device and method. United States.
Sharp, D J. Tue . "Confined ion beam sputtering device and method". United States.
@article{osti_6444969,
title = {Confined ion beam sputtering device and method},
author = {Sharp, D J},
abstractNote = {A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {3}
}