Phosphorus doping a semiconductor particle
Abstract
A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.
- Inventors:
- Issue Date:
- Sponsoring Org.:
- USDOE; USDOE, Washington, DC (United States)
- OSTI Identifier:
- 6433799
- Patent Number(s):
- 5926727
- Application Number:
- PPN: US 8-570028
- Assignee:
- PTO; EDB-99-085320
- DOE Contract Number:
- ZAI-4-11294-04
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 11 Dec 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CRYSTAL DOPING; FABRICATION; P-N JUNCTIONS; P-TYPE CONDUCTORS; PHOSPHORUS; SILICON; ELEMENTS; MATERIALS; NONMETALS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; 360601* - Other Materials- Preparation & Manufacture
Citation Formats
Stevens, G D, and Reynolds, J S. Phosphorus doping a semiconductor particle. United States: N. p., 1999.
Web.
Stevens, G D, & Reynolds, J S. Phosphorus doping a semiconductor particle. United States.
Stevens, G D, and Reynolds, J S. Tue .
"Phosphorus doping a semiconductor particle". United States.
@article{osti_6433799,
title = {Phosphorus doping a semiconductor particle},
author = {Stevens, G D and Reynolds, J S},
abstractNote = {A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 20 00:00:00 EDT 1999},
month = {Tue Jul 20 00:00:00 EDT 1999}
}