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Title: Phosphorus doping a semiconductor particle

Abstract

A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.

Inventors:
;
Issue Date:
Sponsoring Org.:
USDOE; USDOE, Washington, DC (United States)
OSTI Identifier:
6433799
Patent Number(s):
5926727 A
Application Number:
PPN: US 8-570028
Assignee:
PTO; EDB-99-085320
DOE Contract Number:  
ZAI-4-11294-04
Resource Type:
Patent
Resource Relation:
Patent File Date: 11 Dec 1995
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL DOPING; FABRICATION; P-N JUNCTIONS; P-TYPE CONDUCTORS; PHOSPHORUS; SILICON; ELEMENTS; MATERIALS; NONMETALS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Stevens, G.D., and Reynolds, J.S. Phosphorus doping a semiconductor particle. United States: N. p., 1999. Web.
Stevens, G.D., & Reynolds, J.S. Phosphorus doping a semiconductor particle. United States.
Stevens, G.D., and Reynolds, J.S. Tue . "Phosphorus doping a semiconductor particle". United States.
@article{osti_6433799,
title = {Phosphorus doping a semiconductor particle},
author = {Stevens, G.D. and Reynolds, J.S.},
abstractNote = {A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {7}
}